高海霞
个人信息:Personal Information
副教授
性别:女
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:博士学位
在职信息:在岗
所在单位:微电子学院
学科:微电子学与固体电子学
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- [1]Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM.Applied Physics Letters :2021
- [2]Enhanced Switching Stability in Forming-Free SiNx Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure.Advanced Electronic Materials :2019
- [3]Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices.Applied Physics Letters :2019
- [4]Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx-Based Resistive Random Access Memory.Physica Status Solidi A-Applications and Materials Science :2019
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