Personal Information:
Professor
Scientific Research
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- GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing.IEEE ELECTRON DEVICE LETTERS.2016,37(6):701-704
- Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET.IEEE TRANSACTIONS ON ELECTRON DEVICES.2016,63(1):303-310
- InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current.SUPERLATTICES AND MICROSTRUCTURES.2016,93:144-152
- Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction.JAPANESE JOURNAL OF APPLIED PHYSICS.2016,55(4)
- Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain.AIP ADVANCES.2015,5(5)
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