刘红侠
个人信息:Personal Information
教授 博士生导师 研究生导师
性别:女
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:博士学位
在职信息:在岗
所在单位:微电子学院
学科:集成电路系统设计 微电子学与固体电子学
办公地点:北校区东大楼407
联系方式:029-88204085
扫描关注
- [1]Optical characteristics of H2O-based and O-3-based HfO2 films deposited by ALD using spectroscopy ellipsometry.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING.2015,119 (3):957-963
- [2]Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2016,48 :9-13
- [3]Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.2016,27 (8):8550-8558
- [4]Band alignments of O<inf>3</inf>-based and H<inf>2</inf>O-based amorphous LaAlO<inf>3</inf>films on silicon by atomic layer deposition.Journal of Materials Science.2017,28 (1):803-807
- [5]3脳VDD-tolerant ESD detection circuit in a 90 nm CMOS process.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42 (1):56-61 and 20
- [6]Voltage triggered ESD detection circuits in a 90 nm CMOS process.Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University.2015,42 (3):54-60
- [7]Simulation of displacement damage in nanoscale MOSFET caused by galactic cosmic rays.Journal of Computational and Theoretical Nanoscience.2016,13 (8):5242-5246
- [8]Band alignments of La<inf>x</inf>Al<inf>y</inf>O films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios.Journal of Materials Science.2017,28 (6):4702-4705
- [9]Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry.JOURNAL OF ELECTRONIC MATERIALS.2015,44 (8):2592-2597
- [10]Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielect.Wuli Xuebao/Acta Physica Sinica.2014,63 (24):248502
- [11]The influence of process parameters and pulse ratio of precursors on the characteristics of La1-x Al (x) O-3 films deposited by atomic layer deposition.NANOSCALE RESEARCH LETTERS.2015,10 :1-9
- [12]Analog/RF performance of four different Tunneling FETs with the recessed channels.SUPERLATTICES AND MICROSTRUCTURES.2016,100 :1238-1248
- [13]Invariant object recognition based on combination of sparse DBN and SOM with temporal trace rule.Multimedia Tools and Applications.2017,76 (9):12017-12034
- [14]Molecular dynamics simulation of swift heavy ion irradiation effects on amorphous Nano-SiO<inf>2</inf>film.International Journal of Simulation.2015,16 (2):11.1-11.5
- [15]Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.NANOSCALE RESEARCH LETTERS.2015,10
- [16]Effect of Al addition in HfO2 on the optical properties of the dielectrics using spectroscopy ellipsometry.MATERIALS RESEARCH EXPRESS.2015,2 (4)
- [17]Molecular dynamics simulation of latent track formation in bilayer graphene.IEICE ELECTRONICS EXPRESS.2015,12 (22)
- [18]Multiscale simulations of swift heavy ion irradiation effect on bilayer graphene.IEICE ELECTRONICS EXPRESS.2016,13 (8)
- [19]Influences of different structures on the characteristics of H2O-based and O-3-based LaxAlyO films deposited by atomic layer deposition.CHINESE PHYSICS B.2016,25 (5)
- [20]Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.NANOSCALE RESEARCH LETTERS.2016,11