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个人信息：Personal Information
教授 博士生导师 研究生导师
性别：男
学历：博士研究生毕业
学位：工学博士学位
在职信息：在岗
所在单位：先进材料与纳米科技学院
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- [1]Orientation independent growth of uniform ferroelectric Hf0.5Zr0.5O2 thin films on silicon for high-density three-dimensional memory applications.Advanced Functional Materials.2022,32 (49):2209604
- [2]Intrinsic 90° charged domain wall and its effects on ferroelectric properties.Acta Materialia.2022,232 :117920-1–117920-11
- [3]Robustly stable ferroelectric polarization states enable long-term nonvolatile storage against radiation in HfO2-based ferroelectric field-effect transistors.ACS Applied Materials and Interfaces.2022,14 (45):51459–51467
- [4]Robustly stable intermediate memory states in HfO2-based ferroelectric field-effect transistors.Journal of Materiomics.2022,8 (3):685–692
- [5]Flux-closure domains in PbTiO3/SrTiO3 multilayers mediated without tensile strain.Journal of Physical Chemistry C.2022,126 (9):4630–4637
- [6]Interface effects induced by a ZrO2 seed layer on the phase stability and orientation of HfO2 ferroelectric thin films: a first-principles study.Physical Review Applied.2021,16 (4):044048-1–044048-9
- [7]Hf0.5Zr0.5O2-based ferroelectric field-effect transistors with HfO2 seed layers for radiation-hard nonvolatile memory applications.IEEE Transactions on Electron Devices.2021,68 (9):4368–4372
- [8]Mechanical manipulation of nano-twinned ferroelectric domain structures for multilevel data storage.Advanced Functional Materials,31 (19):2011029-1–2011029-9
- [9]Electric field gradient-controlled domain switching for size effect-resistant multilevel operations in HfO2-based ferroelectric field-effect transistor.Advanced Functional Materials,31 (17):2011077-1–2011077-9
- [10]Improvement of remanent polarization of CeO2-HfO2 solid solution thin films on Si substrates by chemical solution deposition.Applied Physics Letters,117 (21):212904-1–212904-6
- [11]Record-low subthreshold-swing negative-capacitance 2D field-effect transistors, Advanced Materials.Advanced Materials,32 (46):2005353-1–2005353-7
- [12]Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors.Journal of Materials Science: Materials in Electronics,31 (3):2049-2056
- [13]A multi-scale model linking microstructure and macro electric behaviors of ferroelectric field effect transistor.Current Applied Physics,20 (3):406-412
- [14]Performance improvement of Hf0.5Zr0.5O2-based ferroelectric-field-effect transistors with ZrO2 seed layers.IEEE Electron Device Letters,40 (5):714-717
- [15]Compatibility of HfN metal gate electrodes with Hf0.5Zr0.5O2 ferroelectric thin films for ferroelectric field-effect transistors.IEEE Electron Device Letters,39 (10):1508-1511
- [16]Program/erase cycling degradation mechanism of HfO2-based FeFET memory.IEEE Electron Device Letters,40 (5):710-713
- [17]Crystallographically engineered hierarchical polydomain nanostructures in perovskite ferroelectric films.Acta Materialia :282-290
- [18]A novel conductive mesoporous layer with a dynamic two-step deposition strategy boosts efficiency of perovskite solar cells to 20%.Advanced Materials,30 (28):1801935-1–1801935-8
- [19]Lithiophilic montmorillonite serves as lithium ion reservoir to facilitate uniform lithium deposition.Nature Communications :4973-1–4973-9
- [20]Memory window and endurance improvement of Hf0.5Zr0.5O2-based FeFETs with ZrO2 seed layers characterized by fast voltage pulse measurements.Nanoscale Research Letters :14: 254-1–254-7