李祥东博士，江苏人，西安电子科技大学广州研究院华山学者菁英教授，硕士生导师，广州第三代半导体创新中心副主任，分别于2013年和2016年获西安电子科技大学微电子学士学位和硕士学位，2020年获比利时鲁汶大学（KU Leuven）欧洲微电子中心IMEC博士学位，拥有超 10 年的第三代半导体 GaN 芯片研发经验，先后师从第三代半导体领域知名专家张进成教授和 IEEE Fellow、IMEC Fellow、charge pumping 测量技术发明人 Guido Groeseneken 教授。深度参与了 imec 全球首家商用级 8 英寸硅基氮化镓技术体系的开发。

欢迎报考2023级硕士研究生~

所获荣誉：

1）欧洲微电子中心imec 2020年度“卓越博士奖”（3个名额/400+博士）；

2）2020年度"海外优秀自费留学生"奖学金；

3）西安电子科技大学“硕士优秀毕业论文特等奖”（top3/2000+硕士）；

4）2010、2011、2015年度国家奖学金.

科研项目：

2021.12~2025.11: 国家重点研发计划“面向大数据中心应用的 8 英寸硅衬底上氮化镓基外延材料、功率电子器件及电源模块关键技术研究”之课题“Si 衬底上 GaN 基功率电子器件的可靠性提升技术及功率集成技术研究”，课题牵头人，390.6万，进行中。

近期代表性学术论文（*为通讯作者）：

1)  T. Zhang, Y. Lv, R. Li, Y. Zhang, Y. Zhang, X. Li*, J. Zhang*, and Y. Hao, “Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer,” IEEE Electron Device Lett., vol. 42, no. 4, pp. 477–480, Apr. 2021.

2)  T. Zhang, Y. Zhang, J. Zhang*, X. Li*, Y. Lv, and Y. Hao, “Current Transport Mechanism of High-Performance Novel GaN MIS Diode,” IEEE Electron Device Lett., vol. 42, no. 3, pp. 304–307, Mar. 2021.

3)  X. Li*, M. Van Hove, M. Zhao, K. Geens, V.-P. Lempinen, J. Sormunen, G. Groeseneken, and S. Decoutere, “200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration,” IEEE Electron Device Lett., vol. 38, no. 7, pp. 918–921, Jul. 2017.

4)  X. Li*, M. Van Hove, M. Zhao, B. Bakeroot, S. You, G. Groeseneken, and S. Decoutere, “Investigation on Carrier Transport through AlN Nucleation Layer from Differently Doped Si(111) Substrates,” IEEE Trans. Electron Devices, vol. 65, no. 5, pp. 1721–1727, May 2018.

5)  X. Li*, M. Van Hove, M. Zhao, K. Geens, W. Guo, S. You, S. Stoffels, V.-P. Lempinen, J. Sormunen, G. Groeseneken, and S. Decoutere, “Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for monolithic integration,” IEEE Electron Device Lett., vol. 39, no. 7, pp. 999–1002, Jul. 2018

6)  X. Li*, M. Zhao, B. Bakeroot, K. Geens, W. Guo, S. You, S. Stoffels, V.-P. Lempinen, J. Sormunen, G. Groeseneken, and S. Decoutere, “Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 553–560, Jan. 2019.

7)  X. Li*, K. Geens, W. Guo, S. You, M. Zhao, D. Fahle, V. Odnoblyudov, G. Groeseneken, and S. Decoutere, “Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates,” IEEE Electron Device Lett., vol. 40, no. 9, pp. 1499–1502, Sep. 2019.

8)  X.Li*, B. Bakeroot, Z. Wu, N. Amirifar, S. You, N. Posthuma, M. Zhao, H. Liang, G. Groeseneken, and S. Decoutere, “Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization,” IEEE Electron Device Lett., vol. 41, no. 4, pp. 577–580, Apr. 2020.

9)  X. Li*, K. Geens, D. Wellekens, M. Zhao, A. Magnani, N. Amirifar, B. Bakeroot, S. You, D. Fahle, H. Hahn, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, and S. Decoutere, “Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates,” IEEE Transactions on Semiconductor Manufacturing, vol. 33, no. 4, pp. 534–538, Nov. 2020.

10) X. Li*, N. Posthuma, B. Bakeroot, H. Liang, S. You, Z. Wu, M. Zhao, G. Groeseneken, and S. Decoutere, “Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics,” IEEE Trans. Power Electron., vol. 36, no. 5, pp. 4927–4930, May 2021.

11) D. Cingu, X. Li*, B. Bakeroot, N. Amirifar, K. Geens, M. Zhao, S. You, G. Groeseneken, and S. Decoutere, “Reliability of p-GaN gate HEMTs in Reverse Conduction,” IEEE Trans. on Electron Devices, vol. 68, no. 2, pp. 645–652, Feb. 2021.

12) S. You, X. Li*, K. Geens, N. Posthuma, M. Zhao, H. Liang, G. Groeseneken, and S. Decoutere, “GaN power ICs Design Using the MIT Virtual Source GaNFET Compact Model with Gate Leakage and VT Instability Effect,” Semiconductor Science and Technology, vol. 36, no. 3, pp. 035008, Mar. 2021.

13) M. Borga*, C. De Santi, S. Stoffels, B. Bakeroot, X. Li, M. Zhao, M. Van Hove, S. Decoutere, G. Meneghesso, M. Meneghini, and E. Zanoni, “Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications,” IEEE Trans. on Electron Devices, vol. 67, no. 2, pp. 595–599, Feb. 2020.

14) M. Borga*, M. Meneghini, S. Stoffels, M. Van Hove, M. Zhao, X. Li, S. Decoutere, E. Zanoni, and G. Meneghesso, “Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs,” Microelectronics Reliability, vol. 88, pp. 584–588, Sep. 2018.

15) M. Borga*, M. Meneghini, S. Stoffels, X. Li, N. Posthuma, M. Van Hove, S. Decoutere, G. Meneghesso, and E. Zanoni, “Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs,” IEEE Trans. on Electron Devices, vol. 65, no. 7, pp. 2765–2770, Jul. 2018.

近期代表性会议论文：

1)    X. Li*, N. Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, B. Bakeroot, D. Wellekens, B. Vanhove, T. Cosnier, R. Langer, D. Marcon, G. Groeseneken, and S. Decoutere, “GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion,” in IEDM Tech. Dig., pp.4.4.1–4.4.4, Dec. 7–11, 2019.

2)    X. Li*, K. Geens, W. Guo, M. Zhao, S. You, N. Posthuma, S. Stoffels, H. Liang, V. Odnoblyudov, C. Basceri, O. Aktas, G. Groeseneken, and S. Decoutere, “  p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs,” in 13th International Conference on Nitride Semiconductors 2019 (ICNS), Jul. 7–12, 2019.    

3)    X. Li*, M. Zhao, K. Geens, W. Guo, S You, S. Stoffels, G. Groeseneken, and S. Decoutere, “Monolithic integration of half-bridge on GaN-on-SOI ,” in International Workshop on Nitride Semiconductors (IWN), Nov. 11–16, 2018.

4)    X. Li*, M. Van Hove, M. Zhao, K. Geens, V. Lempinen, J. Sormunen, S. Stoffels, G. Groeseneken, and S. Decoutere, “200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration,” in 41th Workshop on Compound Semiconductor Devices and Integrated Circuits  (WOCSDICE), pp. 103–104, May 21–24, 2017.

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通讯/办公地址 : 726cc2f957bb5969d0cc036900d673afba2f4ef3a0a63acd352f8345f27a9a38080190fe378abf43eb5988efdcdfeccb22038eae347ebd47929ec6f0afde9c9cb9d8a55c5f080094574e1dfe0081007ef5772289eb79c1846f6b9bcc676607024a19234bfcfceec5dcde0766a798f4dc35feea12a7674551197df1cfb785d93f

邮箱 : 8bbd7b71a5e84fa6e559ddc4e5f9162c23abc032d340171dc1cf9f9848fdcb6fefed81207bfe10f10a0430a90214088c090409312f23a507af977f68588e88d5456b6541512cf125968cbd5ca1e0b6cc2d293e0eb7cd577dbfdbc9c936d0ae53079ac88320445d054a74544083cdb5efdf0b02c49917d336d39c52552d6231db

2009.8 -- 2013.7
西安电子科技大学       微电子学与固体电子学       大学本科毕业       理学学士学位

2013.8 -- 2015.12
西安电子科技大学       微电子学与固体电子学       研究生(硕士)毕业       工学硕士学位

2016.2 -- 2020.11
比利时鲁汶大学（KU Leuven）       电气工程       博士研究生毕业       哲学博士学位

2021.4 -- 至今

广州第三代半导体创新中心      副主任

2021.3 -- 至今

西安电子科技大学广州研究院      华山学者菁英教授

2016.2 -- 2020.11

欧洲微电子中心      PMST      Ph.D researcher