宋庆文
个人信息:Personal Information
教授 博士生导师 研究生导师
性别:男
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:博士学位
在职信息:在岗
所在单位:微电子学院
学科:微电子学与固体电子学
办公地点:东大楼511B
联系方式:qwsong@xidian.edu.cn;
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- [1]Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99 :62-66
- [2]Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99 :62-66
- [3]Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.2015,15 (4):543-551
- [4]4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37 (4):463-466
- [5]4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37 (4):463-466
- [6]Investigation of SiC trench MOSFET with floating islands.IET POWER ELECTRONICS.2016,9 (13):2492-2499
- [7]Investigation of SiC trench MOSFET with floating islands.IET POWER ELECTRONICS.2016,9 (13):2492-2499
- [8]Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current.SCIENCE CHINA-TECHNOLOGICAL SCIENCES.2015,58 (8):1369-1374
- [9]Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs.CHINESE PHYSICS B.2016,25 (4)
- [10]Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors.CHINESE PHYSICS B.2016,25 (3)
- [11]Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs.CHINESE PHYSICS B.2016,25 (4)
- [12]Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors.CHINESE PHYSICS B.2016,25 (3)
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