许晟瑞
个人信息:Personal Information
教授 博士生导师 研究生导师
性别:男
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:博士学位
在职信息:在岗
所在单位:微电子学院
学科:微电子学与固体电子学
联系方式:srxu@xidian.edu.cn
扫描关注
- [1]Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate.OPTICAL MATERIALS EXPRESS.2016,6 (6):1817-1826
- [2]Current mapping of nonpolar alpha-plane and polar c-plane GaN films by conductive atomic force microscopy.JOURNAL OF CRYSTAL GROWTH.2016,451 :13-17
- [3]Temperature dependence of the Raman-active modes in the semipolar (11(2)over-bar2) plane GaN Film.JOURNAL OF APPLIED PHYSICS.2016,120 (24)
- [4]Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire.SCIENTIFIC REPORTS.2016,6
- [5]Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate.AIP ADVANCES.2016,6 (3)
- [6]Improved Semipolar (11 (2)over-bar2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN (x) Interlayer.CHINESE PHYSICS LETTERS.2016,33 (6)
- [7]C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS.2016,33 (12)
- [8]Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy.CHINESE PHYSICS LETTERS.2015,32 (8)
- [9]Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates.CHINESE PHYSICS LETTERS.2015,32 (9)
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