中红外硅基光波导的发展现状

doi:10.16180/j.cnki.issn1007-7820.2024.02.006

摘要/Abstract

摘要：

作为硅光子集成芯片中基本无源器件的硅基光波导是进行光信号传输的通道,其具有良好的性能,且与CMOS(Complementary Metal Oxide Semiconductor)工艺相兼容因而得到广泛应用。用于电信和数据中心的硅光子集成电路已逐步走向商业化。近年来,中红外波段在自由空间通信、传感以及环境监测等领域的潜在应用受到研究者们的广泛关注。文中分析了中红外硅基光波导的研究现状,归纳了SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si₃N₄)、GON(Ge-on Si₃N₄)等波导材料平台和SOPS (Si on Porous Si)、Undercut、Pedestal、Freestanding、Suspended、LOCOS(Local Oxidation of Silicon)以及等离子体结构等制造工艺平台的研究成果。迄今为止,多数单晶硅在MIR(Mid-Infrared)平台的传播损耗大约在0.7~3.0 dB·cm^-1。文中讨论并对比了不同类型波导的应用前景,为中红外硅基光波导的研发、应用和商业化提供了参考。

关键词: 中红外, 硅光子学, 无源器件, 硅基光波导, 绝缘体上硅, 锗硅, 传播损耗, 工作波长

Abstract:

As the basic passive device in silicon photonic integrated chip, silicon-based optical waveguide is the channel for optical signal transmission. Because of its good performance and compatibility with CMOS(Complementary Metal Oxide Semiconductor) process, silicon-based optical waveguide has been widely used. Silicon photonic integrated circuits used in telecommunications and data centers have been gradually commercialized.The potential applications of mid-infrared band in free-space communication, sensing, environmental monitoring and other fields have attracted much attention from researchers in recent years.In this study, the research status of mid-infrared silicon-based optical waveguides in recent years is analyzed.The research results of waveguide material platform of SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si₃N₄)、GON(Ge-on Si₃N₄) and manufacturing process platform of SOPS(Si on Porous Si), Pedestal, Freestanding, Suspended, LOCOS(Local Oxidation of Silicon), plasma structure are summarized. So far, the propagation loss of most monocrystalline silicon in MIR(Mid-Infrared) platform is about 0.7~3.0 dB·cm^-1. The application prospects of different types of waveguides are discussed and compared, which provides a reference for the research and development, application and commercialization of mid-infrared silicon-based optical waveguides.

Key words: mid-infrared, silicon photonics, passive device, silicon-based optical waveguide, silicon on insulator, germanium silicon, propagation loss, working wavelength

中图分类号:

TN214

冯露露,冯松,胡祥建,陈梦林,刘勇,王迪. 中红外硅基光波导的发展现状[J]. 电子科技, 2024, 37(2): 36-45.

FENG Lulu,FENG Song,HU Xiangjian,CHEN Menglin,LIU Yong,WANG Di. Research Status of Mid-Infrared Silicon-Based Optical Waveguides[J]. Electronic Science and Technology, 2024, 37(2): 36-45.

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波导类型	材料平台	工作波长/μm	偏振模式	传输损耗/dB·cm^-1	文献出处
strip	SOI	3.800	TE	3.00	[9]
strip	SOI	3.800	TE/TM	3.40	[12]
slot	SOI	3.800	TE	1.40±0.20	[13]
FSSWG	SOI	2.200	TE	2.80	[14]
strip	GOSI	3.682	TE/TM	8.00	[15]
Rib	SOS	4.500	TE	4.30±0.60	[18]
strip	SOS	4.500	TE	0.74	[19]
strip	SOS	5.180	TE	1.92	[20]
Rib	SOS	5.500	TE	4.00±0.70	[21]
Rib	GOS	8.000~11.000	TE/TM	<5.50	[22]
Rib	GOS	4.700	TE/TM	1.00	[23]
strip	GOS	5.800	TE	2.50	[24]
Rib	GOS	3.800	TE	2.70	[25]
strip	SGOS	4.500	TE/TM	1.00	[27]
strip	SGOS	7.400	TE/TM	2.00	[27]
Rib	SGOS	5.500~8.500	TE/TM	2.00~3.00	[28]
Rib	SON	3.390	TE	5.20±0.60	[29]
Rib	SON	3.390	TM	5.16±0.60	[29]
Rib	GOSN	3.800	TE/TM	3.35	[35]

波导类型	材料平台	工作波长/μm	偏振模式	传输损耗/dB·cm^-1	文献出处
SOPS	SOI	3.39	TE	3.90	[37]
Undercut	SOI	10.60	TE	6.00	[38]
pedestal	SOI	3.70	TE	2.70	[39]
pedestal	SOI	7.10	TE₁₀	0.53	[40]
freestanding	SOI	5.50	TE	13.00~14.00	[41]
Suspended	SOI	7.67	TE	3.10±0.30	[42]
Suspended	SOI	3.80	TE	0.82	[43]
Suspended Ge	GOS	7.50	TE	2.50	[44]
Suspended Ge	GOS	7.70	TE	2.65	[44]
LOCOS	SOI	3.39	TE	1.40	[37]