电子科技 ›› 2024, Vol. 37 ›› Issue (6): 17-28.doi: 10.16180/j.cnki.issn1007-7820.2024.06.003

• 研究论文 • 上一篇    下一篇

单开关谐振脉冲电源的过电压抑制

梁启宇1, 王永刚1, 邱胜顺2   

  1. 1.上海理工大学 机械学院,上海 200093
    2.上海电气控股集团有限公司 智惠医疗装备分公司,上海 200233
  • 收稿日期:2022-12-28 出版日期:2024-06-15 发布日期:2024-06-20
  • 作者简介:梁启宇(1996-),男,硕士研究生。研究方向:高压脉冲源技术及其低温等离子体技术。
    王永刚(1989-),男,博士,讲师。研究方向:高压脉冲源技术及其低温等离子体应用。
  • 基金资助:
    国家自然科学基金青年基金(51707122);国家重点研发计划(2019YFC0119100)

Overvoltage Suppression of Single Switch Resonant Pulse Power Supply

LIANG Qiyu1, WANG Yonggang1, QIU Shengshun2   

  1. 1. School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
    2. Zhihui Healthcare Equipment Branch,Shanghai Electric Holdings Group Co., Ltd., Shanghai 200233,China
  • Received:2022-12-28 Online:2024-06-15 Published:2024-06-20
  • Supported by:
    National Natural Science Foundation of China(51707122);National Key R&D Program of China(2019YFC0119100)

摘要:

单开关谐振电路只需使用一个开关即可产生高压脉冲,然而当开关在谐振电流为正关断时会产生关断过电压,使开关损坏。为解决该问题,可在开关两端并联RCD(Resistance-Capacitance-Diode)吸收电路或在变压器原边并联R-D(Resistance-Diode)续流支路。但在高压脉冲条件下,这两种过电压抑制电路在不同负载下的带载特性以及效果优劣不明确。文中对比分析了两种电路的过电压抑制机理、参数选择依据、过电压抑制效果和元器件功耗。结果表明,含R-D支路的电源开关过电压与漏感电流和支路电阻R成正比,若R较大,其过电压系数大于含RCD吸收电路的电源。若R较小,元器件功率损耗较大。在高压脉冲电源中,RCD吸收电路的电容不需要在开关导通时将电放完。由于漏感限制,谐振脉冲电路在短路时电流不会过大而烧毁开关。同时,在驱动容性介质阻挡放电时电流能够自动反向,可实现零电流关断。

关键词: 单开关谐振电路, 高压脉冲功率, 脉冲变压器, 开关关断过电压, 过电压抑制电路, 零电流关断, Pspice参数化仿真, 介质阻挡放电

Abstract:

The single-switch resonant circuit can generate high-voltage pulses using only one switch, however, when the switch is turned off at a positive resonant current, a turn-off overvoltage is generated, which damages the switch. To solve this problem, the RCD (Resistance-Capacitance-Diode) snubber circuit is paralleled with the switch or the R-D (Resistance-Diode) freewheeling branch is paralleled with the primary side of the transformer. However, under high-voltage pulse conditions, the loading characteristics and effects of the two overvoltage suppression circuits under different loads are still unclear. This study compares and analyzes the overvoltage suppression mechanism, parameter selection basis, overvoltage suppression effect and the components power loss of the two circuits. The results show that the overvoltage of the power supply switch with R-D branch is proportional to the leakage inductance current and the resistance R of the branch. If R is larger, its overvoltage coefficient is larger than that of the power supply with RCD absorption circuit. And if R is smaller, the components power loss is large. In a high-voltage pulse power supply, the capacitance of the RCD snubber circuit does not need to discharge the power. Due to the limitation of leakage inductance, when the resonant pulse circuit is short-circuited, the current is not too large to burn the switch. When driving the capacitive dielectric barrier discharge, the current can be reversed automatically to achieve zero current shutdown.

Key words: single switch resonant circuit, high voltage pulse power, pulse transformer, switch turn off overvoltage, overvoltage suppression circuit, zero current turn off, Pspice parametric simulation, dielectric barrier discharge

中图分类号: 

  • TN787
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