一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

doi:10.16180/j.cnki.issn1007-7820.2021.01.011

电子科技 ›› 2021, Vol. 34 ›› Issue (1): 60-64.doi: 10.16180/j.cnki.issn1007-7820.2021.01.011

一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

毛鸿凯,苏芳文,林茂,张飞,隋金池

杭州电子科技大学电子信息学院,浙江杭州 310018

收稿日期:2019-10-31 出版日期:2021-01-15 发布日期:2021-01-22
作者简介:毛鸿凯(1995-),男,硕士研究生。研究方向:宽禁带功率半导体器件设计。苏芳文 (1994-),男,硕士研究生。研究方向:宽禁带功率半导体器件设计。
基金资助:
浙江省杰出青年基金(LR17F040001)(LR17F040001)

Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region

MAO Hongkai,SU Fangwen,LIN Mao,ZHANG Fei,SUI Jinchi

School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China

Received:2019-10-31 Online:2021-01-15 Published:2021-01-22
Supported by:
The Excellent Youth Foundation of Zhejiang Province of China(LR17F040001)

摘要/Abstract

摘要：

传统沟槽型4H-SiC IGBT中关断损耗较大,导通压降和关断损耗难以折中。针对此问题,文中提出了发射极区域含有低寿命区,同时集电区引入阶梯型集电极的LS-IGBT结构来降低器件的关断损耗。通过同时控制集电区注入的空穴载流子数量和P基区载流子的寿命,在基本维持器件击穿电压的前提下降低器件的关断损耗。使用Silvaco Atlas器件仿真工具对改进结构进行特性仿真分析,并与传统结构进行对比。仿真结果显示,在击穿电压一致的前提下,新结构的关断损耗提升了84.5 %,同时器件的导通压降降低了8.3 %,证明了设计思想的正确性。

关键词: 击穿电压, 关断损耗, 4H-SiC, IGBT, 通态压降, Silvaco Atlas

Abstract:

The traditional trench type 4H-SiC IGBT has a large turn-off loss, and it is difficult to compromise the turn-on voltage drop and turn-off loss. Aiming at this problem, a LS-IGBT structure was proposed, in which the emitter region contained a low-life region while a stepped collector was introduced by collector region to reduce the turn-off loss of the device. This method reduced the turn-off loss of a device by simultaneously controlling the number of hole carriers injected in the collector region and the lifetime of the P base region carriers, while maintaining the device breakdown voltage. The Silvaco Atlas device simulation tool was used to simulate the improved structure and compare it with the traditional structure. The simulation results showed that under the premise of consistent breakdown voltage, the turn-off loss of the new structure was increased by 84.5 % compared with the conventional structure, and the turn-on voltage drop of the device was reduced by 8.3%, which verified the correctness of the design.

Key words: breakdown voltage, turn-off loss, 4H-SiC, IGBT, on-state voltage, Silvaco Atlas

中图分类号:

TN312+.3

毛鸿凯, 苏芳文, 林茂, 张飞, 隋金池. 一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究[J]. 电子科技, 2021, 34(1): 60-64.

MAO Hongkai, SU Fangwen, LIN Mao, ZHANG Fei, SUI Jinchi. Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region[J]. Electronic Science and Technology, 2021, 34(1): 60-64.

图/表 8

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参考文献 19

[1]	Watanabe N, Yoshimoto H, Shima A. Impact of cell layout and device structure on on-voltage reduction of 6.5 kV n-channel SiC IGBTs[J]. Materials Science Forum, 2018,92(4):637-640.
[2]	刘佳佳, 刘英坤, 谭永亮. SiC电力电子器件研究现状及新进展[J]. 半导体技术, 2017,42(10):744-753.
	Liu Jiajia, Liu Yingkun, Tan Yongliang. Research status and new progress of SiC power electronic devices[J]. Semiconductor Technology, 2017,42(10):744-753.
[3]	Andreas H, Thomas H, Achim E. Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs[J]. Materials Science Forum, 2018,92(4):901-904.
[4]	Chowdhury S, Chow T P. Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs[C].Prague:The Twenty-eighth International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016.
[5]	Chowdhury S, Hitchcock C W, Stum Z. Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs[J]. IEEE Transactions on Electron Devices, 2017,64(3):888-896.
[6]	Yang X L, Tou Y H, Yong T T, et al. Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage[J]. Journal of Semiconductors, 2018,39(3):57-59.
[7]	Samanta P, Mandal K C. Leakage current conduction, hole injection, and time-dependent dielectric breakdown of\r, n\r,-4H-SiC MOS capacitors during positive bias temperature stress[J]. Journal of Applied Physics, 2017,121(3):34-51.
[8]	Deng E, Zhao Z, Zhang P, et al. Optimization of the thermal contact resistance within press pack IGBTs[J]. Microelectronics Reliability, 2017,69(5):17-28.
[9]	漆宇, 李彦涌, 胡家喜, 等. SiC功率器件应用现状及发展趋势[J]. 大功率变流技术, 2016(5):1-6.
	Qi Yu, Li Yanyong, Hu Jiaxi, et al. Application status of SiC power devices and its development tendency[J]. High Power Converter Technology, 2016(5):1-6.
[10]	Sun L C, Duan B X, Yang X, et al. Analysis of the novel Si/SiC heterojunction IGBT characteristics by TCAD simulation[J]. Superlattices and Microstructures, 2018,12(2):631-635.
[11]	Liu Y J, Wang Y, Hao Y, et al. A low turn-off loss 4H-SiC trench IGBT with schottky contact in the collector side[J]. IEEE Transactions on Electron Devices, 2017,64(11):1-6.
[12]	Tamaki T, Walden G G, Sui Y, et al. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs[J]. IEEE Transactions on Electron Devices, 2008,55(8):1928-1933.
[13]	许龙来, 钟志亲. 4H-SiC材料干法刻蚀工艺的研究[J]. 电子科技, 2019,32(2):1-3,8.
	Xu Longlai, Zhong Zhiqin. Study on dry etching in 4H-SiC material[J]. Electronic Science and Technology, 2019,32(2):1-3,8.
[14]	曲鹏程, 唐代飞, 向鹏飞, 等. 氮化硅等离子体刻蚀工艺研究[J]. 电子科技, 2017,30(8):153-155.
	Qu Pengcheng, Tang Daifei, Xiang Pengfei, et al. Study on plasma etching process of silicon nitride[J]. Electronic Science and Technology, 2017,30(8):153-155.
[15]	Rana P, Narula C, Rani A, et al. Ion implantation effects of negative oxygen on copper nanowires[J]. Journal of Materials Science:Materials in Electronics, 2017,28(14):9998-10006.
[16]	Abe Y, Umeda T, Okamoto M, et al. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors[J]. Applied Physics Letters, 2018,112(3):105-120.
[17]	Vechalapu K, Bhattacharya S, Brunt E V, et al. Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium-voltage converter under the same dv/dt conditions[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2017,5(1):469-489.
[18]	Johannesson D, Nawaz M, Nee H P. TCAD model calibration of high voltage 4H-SiC bipolar junction transistors[J]. Materials Science Forum, 2019,96(3):670-673.
[19]	Patrick F, Marilena V, Ferdinando I, et al. Temperature-dependence study of the gate current SiO₂/4H-SiC MOS capacitors[J]. Materials Science Forum, 2018,92(4):473-476.

参数	参数值
半元胞宽度	2.1 μm
N^-漂移区厚度	160 μm
栅极宽度	0.6 μm
栅极厚度	5 μm
P⁺源区宽度	1 μm
P⁺源区厚度	0.25 μm
P⁺源区掺杂浓度	5×10¹⁹ cm^-3
N⁺源区掺杂浓度	2×10¹⁹ cm^-3
P^-基区厚度	1 μm
P^-基区掺杂浓度	4×10¹⁷ cm^-3
P⁺屏蔽层掺杂浓度	5×10¹⁸ cm^-3
N^-漂移区掺杂浓度	4.5×10¹⁴ cm^-3
N缓冲层厚度	2 μm
N缓冲层掺杂浓度	1×10¹⁷ cm^-3
P⁺集电区掺杂浓度	1×10¹⁹ cm^-3

参数	数值	含义
E_g₃₀₀/eV	3.24	300 K时材料的禁带宽度
E_g_alpha/eV·K^-1	4.15×10^-4	禁带宽度模型的参数
E_g_beta/eV·K^-1	-131	禁带宽度模型的参数
Permittivity	9.7	相对介电常数
Affinity	4.2	电子亲和能
AUGN/cm⁶·s^-1	5×10^-32	电子的俄歇复合系数
AUGP/cm⁶·s^-1	2×10^-32	空穴的俄歇复合系数
E_ab/eV	0.2	受主能级
E_db/eV	0.1	施主能级
G_vb/eV	4	价带简并因子
G_cb/eV	2	导带简并因子
LT.TAUN	5	电子的载流子寿命模型参数
LT.TAUP	5	空穴的载流子寿命模型参数
N_srhn/cm^-3	3×10^-17	电子的肖特基复合模型参数
N_srhp/cm^-3	3×10^-17	空穴的肖特基复合模型参数
ARICHN/A·(K^-2·cm^-2)^-1 A	110	电子的有效理查德森常数
AARICHP/A·(K^-2·cm^-2)^-1A	30	空穴的有效理查德森常数

一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region

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