一种高精度低温漂带隙基准电路的设计与实现

doi:10.19665/j.issn1001-2400.2019.02.008

西安电子科技大学学报 ›› 2019, Vol. 46 ›› Issue (2): 41-46.doi: 10.19665/j.issn1001-2400.2019.02.008

一种高精度低温漂带隙基准电路的设计与实现

刘晓轩¹,张玉明¹,季轻舟²,曹天骄²

^1. 西安电子科技大学宽禁带半导体技术国防重点学科实验室, 陕西西安 710071
^2. 西安微电子技术研究所,陕西西安 710065

收稿日期:2018-10-17 出版日期:2019-04-20 发布日期:2019-04-20
作者简介:刘晓轩(1994-),男,西安电子科技大学硕士研究生,E-mail:1041605396@qq.com.

Design and realization of a high-precision and low temperature drift reference circuit

LIU Xiaoxuan¹,ZHANG Yuming¹,JI Qingzhou²,CAO Tianjiao²

^1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ., Xi’an 710071, China
^2. Xi’an Microelectronic Technology Institute,Xi’an 710065, China

Received:2018-10-17 Online:2019-04-20 Published:2019-04-20

摘要/Abstract

摘要：

针对带隙基准电路对集成电路精度的影响,提出了一种新的低温漂带隙基准电路。通过分段温度补偿,补偿了带隙基准电路,减小了温度漂移,优化了基准的温度性能。基于西岳公司3μm18V双极工艺,设计了基准电路和版图,并进行流片。仿真和流片结果表明:在典型工艺角下,基准在-55℃~125℃内,温度系数为1.7×10 ^-6~6.0×10 ^-6/℃;在2.2V的电源幅度范围下,具有0.03 mV/V的电源抑制特性。该电路已成功应用于一款线性稳压电源中。

关键词: 带隙基准, 分段温度补偿, 高阶温度特性

Abstract:

A novel bandgap reference circuit with a low temperature coefficient is presented, which compensates the voltage slightly and optimizes the temperature characteristic by setting up a subsection compensation circuit. The circuit and its layout have been done by the 3μm 18V Bipolar process in the No.771 Institute. Simulation and fabrication results show that the temperature coefficient of the voltage reference is 1.7×10 ^-6~6.0×10 ^-6/℃ at -55℃~125℃ under the condition of the 2.2V wide input voltage range, and that the circuit possesses the power supply rejected characteristic of 0.03 mV/V. This circuit and its layout have been successfully applied to a low-dropout regulator.

Key words: bandgap reference, subsection temperature compensation, high-order temperature characteristic

中图分类号:

TN431

刘晓轩,张玉明,季轻舟,曹天骄. 一种高精度低温漂带隙基准电路的设计与实现[J]. 西安电子科技大学学报, 2019, 46(2): 41-46.

LIU Xiaoxuan,ZHANG Yuming,JI Qingzhou,CAO Tianjiao. Design and realization of a high-precision and low temperature drift reference circuit[J]. Journal of Xidian University, 2019, 46(2): 41-46.

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参考文献 10

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[6]	李娅妮, 孙亚东, 王旭 . 一种低失调高PSRR的带隙基准电路[J]. 西安电子科技大学学报, 2017,44(5):92-96. doi: 10.3969/j.issn.1001-2400.2017.05.016
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测试参数	1#	2#	3#
最大电压/V	1.20239	1.20095	1.20055
最小电压/V	1.20147	1.20045	1.19997
平均电压/V	1.20189	1.20077	1.20027
温度系数/℃^-1	4.25254×10^-6	2.32177×10^-6	2.684572×10^-6

性能参数	文献[1]	文献[3]	文献[6]	文中
工艺/μm	0.80(BiCMOS)	0.35(BiCMOS)	0.18(BiCMOS)	3.00(Bipolar)
基准电压/V	1.167	1.207	1.240	1.200
电源电压/V	5.0	3.3	1.8	3.3
温度系数/℃^-1	5.98×10^-6(仿真)	2.2×10^-6(仿真)	34.6×10^-6(仿真)	1.7×10^-6~6.0×10^-6(实测)
工作温度/℃	-50~150	-25~80	-30~100	-50~125

一种高精度低温漂带隙基准电路的设计与实现

Design and realization of a high-precision and low temperature drift reference circuit

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