集成Si基低噪声放大器的注入损伤研究

doi:10.3969/j.issn.1001-2400.2010.05.022

J4 ›› 2010, Vol. 37 ›› Issue (5): 898-903.doi: 10.3969/j.issn.1001-2400.2010.05.022

集成Si基低噪声放大器的注入损伤研究

柴常春;张冰;任兴荣;冷鹏

(西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2009-11-18 出版日期:2010-10-20 发布日期:2010-10-11
通讯作者: 柴常春
作者简介:柴常春(1960-)，男，教授，E-mail: ccchai@mail.xidian.edu.cn．
基金资助:
国家自然科学基金资助项目(60776034)

Injection damage of the integrated silicon low-noise amplifier

CHAI Chang-chun;ZHANG Bing;REN Xing-rong;LENG Peng

(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2009-11-18 Online:2010-10-20 Published:2010-10-11
Contact: CHAI Chang-chun

摘要/Abstract

摘要：

Si基和GaAs基低噪声放大器(LNA)内部有源器件的基极／发射极间是注入能量作用下容易损伤的敏感部位，同时Si基LNA内部的无源电阻也是外界能量作用下的易损薄弱环节之一．为了研究注入损伤机理和对LNA性能参数的影响，进行了能量色散谱(EDS)分析和表面形貌(SEM)分析．SEM分析表明，不同能量作用下的样品其内部无源电阻和晶体管基极分别出现了异常，而对比正常和异常区域的EDS谱表明电极异常区域的组分有明显变化．ADS2004A的仿真结果表明，能量作用后电阻损伤阻值增大引起LNA噪声系数和增益特性退化．实验结果表明，LNA噪声系数N_F对能量的作用更敏感，能量注入对N_F的影响远强于其对增益的影响，噪声系数N_F的变化应作为Si基LNA能量作用损伤的判据之一．

关键词: 低噪声放大器, 噪声系数, 能量注入, 损伤效应, 无源电阻

Abstract:

The area between the base and the emitter of a bipolar active device inside the silicon and GaAs low noise amplifiers(LNA) is most vulnerable to energy injection. Besides the active device, the interior passive resistance of Si-LNA is also one of the elements vulnerable to external energy injection. To study the damage mechanism of energy injection and its effect on the performance parameters of LNA, the energy-dispersive X-ray spectroscopy (EDS) analysis and the scanning electron microscope (SEM) analysis of the Si-LNA pre-and post-energy injection have been made. The SEM analysis indicates that the passive resistance and the base electrode of a bipolar junction transisitor have been abnormal respectively after the injection of various kinds of energy. A comparion between the energy-dispersive X-ray spectrums of normal and abnormal regions shows an obvious change in the constituents of the abnormal region of an electrode. Simulation results of ADS2004A indicate that the increase in resistance caused by passive resistance damage after energy injection leads to the degenerations of the LNA noise figure and gain characteristic. Meanwhile, experimental results show that the noise figure N_F is more sensitive to energy injection than the gain characteristic, i.e., the effect of energy injection on the noise figure is far stronger than that on the gain. Therefore, the change in the noise figure N_F should be recognized as one of the significant criteria for the Si-LNA damage effect.

Key words: low noise amplifier(LNA), noise figure, energy injection, damage effect, passive resistance

柴常春;张冰;任兴荣;冷鹏. 集成Si基低噪声放大器的注入损伤研究[J]. J4, 2010, 37(5): 898-903.

CHAI Chang-chun;ZHANG Bing;REN Xing-rong;LENG Peng. Injection damage of the integrated silicon low-noise amplifier[J]. J4, 2010, 37(5): 898-903.

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集成Si基低噪声放大器的注入损伤研究

Injection damage of the integrated silicon low-noise amplifier

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