应变锗的导带结构计算与分析

doi:10.3969/j.issn.1001-2400.2014.02.020

J4 ›› 2014, Vol. 41 ›› Issue (2): 120-124+171.doi: 10.3969/j.issn.1001-2400.2014.02.020

应变锗的导带结构计算与分析

戴显英^1,2;李金龙^1,2;郝跃^1,2

(1. 西安电子科技大学微电子学院，陕西西安 710071;
2. 西安电子科技大学宽带隙半导体国家重点学科实验室，陕西西安 710071)

收稿日期:2013-08-09 出版日期:2014-04-20 发布日期:2014-05-30
通讯作者: 戴显英
作者简介:戴显英(1961-)，男，教授，E-mail：xydai@xidian.edu.cn．
基金资助:
国家重点基础研究(973)资助项目(6139801-1)

Calculation and analysis of the conduction band-structure of strained Germanium

DAI Xianying^1,2;LI Jinlong^1,2;HAO Yue^1,2

(1. School of Microelectronic, Xidian Univ., Xi'an 710071， China;
2. State Key Lab. of Wide Bandgap Semiconductor Technology Disciplines, Xidian Univ., Xi'an 710071， China)

Received:2013-08-09 Online:2014-04-20 Published:2014-05-30
Contact: DAI Xianying

摘要/Abstract

摘要：

应用胡克定律，建立了单、双轴张应力作用下应变锗在任意面内沿<001>、<110>和<111>方向的应变张量模型．根据线性形变势能理论，计算了单轴应力沿<001>、<110>和<111>方向作用下以及双轴应力在不同晶面内的应变锗导带各个能谷的谷底能级的变化情况．计算结果显示，在<001>方向的单轴应力作用下，Δ能谷带边能级分裂，且在压应力为1.8GPa时，Δ能谷的谷底能级变为最低能级．在<110>方向的单轴应力作用下，Δ能谷和L能谷带边能级分裂．在<111>方向的单轴应力作用下，L能谷带边能级分裂．并且随着应力的增加，所有能谷最低能级下降．而在双轴张应力作用下，当面内应变张量达到1.8％时，(001)面应变锗的Γ能谷最低，能级比Δ能谷最低能级还要低．这表明，应变锗由间接带隙半导体变为直接带隙半导体．所得到的结果可为应变锗半导体器件和光电器件的设计提供参考．

关键词: 应变锗, 导带能级结构, 单轴与双轴, 应变张量

Abstract:

This paper estabilishes the strained-tensor model by Hooke's law and calculates the energy-level shifts of L, Δ and Γ valleys by the deformation potential theory. By enforcing the uniaxial stress in germanium along <001> direction, the edge band of the Δ valley is split with the bottom energy-level being the lowest one among all valleys when the compressive stress is 1.8GPa. When the strained direction is <110>, the edge bands of L and Δ valleys are split. The L valley is split as the strained direction is <111>. When the biaxial tensile-strain is applied, we obtain the conclusion that the strained Ge can become the direct band gap from the indirect band gap as a tensile in-plane strain is 1.8％.

Key words: strained Ge, conduction band structure, uniaxial and biaxial, strain tensor

中图分类号:

TN304.1

戴显英;李金龙;郝跃. 应变锗的导带结构计算与分析[J]. J4, 2014, 41(2): 120-124+171.

DAI Xianying;LI Jinlong;HAO Yue. Calculation and analysis of the conduction band-structure of strained Germanium[J]. J4, 2014, 41(2): 120-124+171.

参考文献

［1］ Moustafa E K, Guy F, Sauvage S, et al. Band Structure and Optical Gain of Tensile-strained G-ermanium Based on a 30kp Formalism ［J］. Journal of Applied Physics, 2010, 107(1): 013710-013717.
［2］赵丽霞, 张鹤鸣, 戴显英, 等. 应变Si/(101)Si_xGe_1-x空穴迁移率［J］. 西安电子科技大学学报, 2013, 40(3): 121-125.
Zhao Lixia, Zhang Heming, Dai Xianying, et al. Hole Mobility of Strained Si/(101)Si_xGe_1-x ［J］. Journal of Xidian University, 2013, 40(3): 121-125.
［3］赵丽霞, 张鹤鸣, 宣荣喜, 等. 应变Si/Si_1-xGe_x(100)电子散射几率［J］. 西安电子科技大学学报, 2012, 39(3): 86-89.
Zhao Lixia, Zhang Heming, Xuan Rongxi, et al. Scattering Rates of Electrons in Strained Si/Si_1-xGe_x(100)［J］. Journal of Xidian University, 2012, 39(3): 86-89.
［4］刘谈平, 王召巴, 刘伟奇. 适用于激光电视的二次补偿开关型半导体激光温控电源设计［J］. 西安电子科技大学学报, 2012, 39(3): 215-220.
Liu Danping, Wang Zhaoba, Liu Weiqi. Design of the Swith-mode Two-compensatory Semiconductor Laser Temperature Control Power Supply ［J］. Journal of Xidian University, 2012, 39(3): 215-220.
［5］黄诗浩, 李成, 陈城钊, 等. N型掺杂应变Ge发光性质［J］. 物理学报, 2012, 61(3): 356-363.
Liu Shihao, Li Cheng, Chen Chengzhao, et al. The Optical Property of Tensile-strained N-type Doped Ge ［J］. Acta Physica Sinica, 2012, 61(3): 356-363.
［6］陈虎, 王加贤, 张培. Ge, Al共掺SiO2薄膜的发光性能研究［J］. 半导体技术, 2012, 37(3): 212-215.
Chen Hu, Wang Jianxian, Zhang Pei. Photoluminescence Properties of Ge and Al Co-Doped SiO₂ Films ［J］. Semiconductor Technology, 2012, 37(3): 212-215.
［7］ Song Jianjun, Zhang Heming, Hu Huiyong, et al. Determination of Conduction Band Edge Characteristics of Strained Si/Si_1-xGe_x ［J］. Chinese Physics, 2007, 16(12): 3827-3831.
［8］ Levinshtein M, Rumyantsev S, Shur M. Handbook Series on Semiconductor Parameters［M］. London: World Scientific, 1999.
［9］宋建军, 张鹤鸣, 戴显英, 等. 第一性原理研究应变Si/(111)Si_1-xGe_x能带结构［J］. 物理学报, 2008, 57(9): 5918-5922.
Song Jianjun, Zhang Heming, Dai Xianying, et al. Band Structure of Strained Si/(111)Si_1-xGe_x: a First Principles Investigation ［J］. Acta Physica Sinica, 2008, 57(9): 5918-5922.
［10］宋建军, 张鹤鸣, 戴显英, 等. 应变Si价带色散关系模型［J］. 物理学报, 2008, 57(11): 7228-7232.
Song Jianjun, Zhang Heming, Dai Xianying, et al. Dispersion Relation Model of Valence Band in Strained Si ［J］. Acta Physica Sinica, 2008, 57(11): 7228-7232.
［11］季振国. Ⅳ族、Ⅲ-Ⅴ族和Ⅱ-Ⅵ族半导体材料的特性［M］. 北京: 科学出版社, 2009: 40-167.
［12］ Bardeen J, Shockley W. Deformation Potential and Mobilities in Non-polar Crystals ［J］. Physical Review, 1950, 80(1): 72-80.
［13］ Balslev I. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium ［J］. Physical Review, 1966, 143(2): 636-647.
［14］ Herring C, Vogt E. Transport and Deformation-potential Theory for Many-valley Semiconductors with Anisotropic Scattering ［J］. Physical Review, 1956, 101(3): 944-961.
［15］马建立, 张鹤鸣, 宋建军, 等. 单轴应力锗能带结构研究［J］. 物理学报, 2012, 42(1): 15-21.
Ma Jianli, Zhang Heming, Song Jianjun, et al. Energy-band Structure for Uniaxial Stressed Germanium［J］. Acta Physica Sinica, 2012, 42(1): 15-21.
［16］ Soref R, Kouvetakis J, Tolle J, et al. Advances in SiGeSn Technology ［J］. Applied Physics Letters, 2003, 82(12): 3281-3291.

应变锗的导带结构计算与分析

Calculation and analysis of the conduction band-structure of strained Germanium

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