GaN薄膜外延过程的动力学蒙特卡洛仿真

doi:10.3969/j.issn.1001-2400.2016.03.029

西安电子科技大学学报 ›› 2016, Vol. 43 ›› Issue (3): 167-171.doi: 10.3969/j.issn.1001-2400.2016.03.029

GaN薄膜外延过程的动力学蒙特卡洛仿真

冯兰胜1;过润秋1;张进成2

(1. 西安电子科技大学机电工程学院，陕西西安 710071;
2. 西安电子科技大学微电子学院，陕西西安 710071)

收稿日期:2015-11-11 出版日期:2016-06-20 发布日期:2016-07-16
通讯作者: 冯兰胜
作者简介:冯兰胜(1978-)，男，讲师，西安电子科技大学博士研究生，E-mail: fenglansheng001@163.com．
基金资助:
国家自然科学基金资助项目(61334002)；国家重大科技专项资金资助项目(2011ZX01002-001)

Kinetic Monte Carlo simulation of GaN epitaxy

FENG Lansheng1;GUO Runqiu1;ZHANG Jincheng2

(1. School of Mechano-electronic Engineering, Xidian Univ., Xi'an 710071, China;
2. School of Microelectronics, Xidian Univ., Xi'an 710071, China)

Received:2015-11-11 Online:2016-06-20 Published:2016-07-16
Contact: FENG Lansheng

摘要/Abstract

摘要：

为更好研究GaN材料的生长机理，提出了一种在金属有机物化学气相淀积系统中生长GaN的化学反应生长模型，并结合动力学蒙特卡罗方法模拟了垂直喷淋式金属有机物化学气相淀积系统中GaN的生长过程．模拟结果表明，在垂直喷淋式金属有机物化学气相淀积系统中生长GaN时，首先发生加合反应，随着反应物逐步接近高温衬底，再转变为热解反应，最终生成GaN．GaN的生长速率随温度的升高而升高，而衬底的表面温度均匀性会直接影响最终材料的表面形貌．文中还在动力学蒙特卡罗方法中模拟了反应粒子在衬底表面的扩散和脱附过程，这些过程均主要受温度的影响，并影响材料的表面形貌和生长速率．

关键词: GaN, 动力学蒙特卡罗, 反应模型, 反应动力学

Abstract:

A chemical reaction mode about GaN epitaxy in MOCVD is presented. We simulate the growth process of GaN in the vertical-spray MOCVD system on this mode using the KMC mothod. The result shows that adductive reaction mostly occurs at a lower temperature and pyrolytic reaction mostly occurs at a high temperature. And the growth rate increases with increasing temperature. This feature determines the surface morphology of the material. We also include the diffusion and desorption process of the reaction particle by the KMC method. These processes depend mostly on temperature and ultimately affect the surface morphology of the GaN material.

Key words: GaN, kinetic Monte Carlo(KMC), reaction model, reaction kinetics

冯兰胜;过润秋;张进成. GaN薄膜外延过程的动力学蒙特卡洛仿真[J]. 西安电子科技大学学报, 2016, 43(3): 167-171.

FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Kinetic Monte Carlo simulation of GaN epitaxy[J]. Journal of Xidian University, 2016, 43(3): 167-171.

参考文献

［1］ TSENG C F, YEN T. Transport Phenomena and the Effects of Reactor Geometry for Epitaxial GaN Growth in a Vertical MOCVD Reactor［J］. Journal of Crystal Growth, 2015, 432: 54-63.
［2］ ZHANG Z, FANG H S. Influencing Factors of GaN Growth Uniformity Through Orthogonal Test Analysis［J］. Applied Thermal Engineering, 2015, 91: 53-61.
［3］ ZHOU A, XIU X Q. Effect of Lattice Defects on the Property of GaN Crystal: Amolecular Dynamics Simulation Study ［DB/OL］. ［2015-10-10］. http://www.sciencedirect.com/science/article/pii/S0749603615302445.
［4］ KEMPISTY P, STRAK P. DFT Study of Ammonia Desorption from the GaN(0001) Surface Covered with NH₃/NH₂ Mixture［J］. Journal of Crystal Growth, 2014, 403: 105-109.
［5］ TOKOI H. Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-phase Epitaxy ［J］. Journal of the Electrochemical Society, 2012, 159(5): 270-275.
［6］于海群. GaN沉积的化学反应动力学进展［J］. 材料导报A: 综述篇, 2012, 26(9): 21-24.
YU Haiqun. The Progress of Chemical Reaction Kinetics with GaN Deposition［J］. Materials Review A: Review Article, 2012, 26(9): 21-24.
［7］王国斌, 张永红, 王怀兵. 氮化镓生长反应模型与数值模拟研究［J］. 人工晶体学报, 2010, 139(S1): 160-163.
WANG Guobin, ZHANG Yonghong, WANG Huaibing. Reaction Model and Numerical Simulation of Gallium Nitride Growth［J］. Journal of Synthetic Crystals, 2010, 139(S1): 160-163.
［8］ PARIKH R P, ADOMAITIS R A. An Overview of Gallium Nitride Growth Chemistry and Its Effect on Reactor Design: Application to a Planetary Radial-flow CVD System［J］. Journal of Crystal Growth, 2006, 286(2006): 259-278.
［9］ FU K, FU Y, HAN P. Kinetic Monte Carlo Study of Metal Organic Chemical Vapor Deposition Growth Dynamics of GaN Thin Film at Microscopic Level ［DB/OL］. ［2015-10-11］. http://dx.doi.org/10.1063/1.2927389.

[1]	戈勤,徐波,陶洪琪,王维波,马晓华,郭方金,刘宇. W波段3.4 W/mm GaN功率放大器MMIC[J]. 西安电子科技大学学报, 2020, 47(1): 24-29.
[2]	冯兰胜;过润秋;张进成. MOCVD反应室流场分析及其对GaN生长的影响[J]. 西安电子科技大学学报, 2017, 44(1): 171-175.
[3]	冯兰胜;过润秋;张进成. 垂直式MOCVD中生长参数对GaN材料生长的影响[J]. 西安电子科技大学学报, 2016, 43(5): 178-182.
[4]	刘红侠;卢风铭;王勇淮;宋大建;武毅. AlGaN/GaN异质结中二维电子气多子带解析建模[J]. J4, 2011, 38(5): 147-151.
[5]	陈炽;郝跃;冯辉;马晓华;张进城;胡仕刚. X 波段单级氮化镓固态放大器[J]. J4, 2009, 36(6): 1039-1043.
[6]	王冲;郝跃;张进城. AlGaN/GaN HEMT研制及特性分析[J]. J4, 2005, 32(2): 234-236.
[7]	杨燕;郝跃;张进城;李培咸. GaN基微波半导体器件研究进展[J]. J4, 2004, 31(3): 367-372.
[8]	暂时无作者信息. AlGaN/GaN中二维电子气研究新进展[J]. J4, 2003, 30(3): 326-330.
[9]	李峰;李建东;李夏. 无线OFDM系统广义信道分析和自适应盲信道估计算法[J]. J4, 2003, 30(2): 191-196.
[10]	段猛;郝跃. GaN基蓝色LED的研究进展[J]. J4, 2003, 30(1): 60-65.

GaN薄膜外延过程的动力学蒙特卡洛仿真

Kinetic Monte Carlo simulation of GaN epitaxy

PDF (PC)

赞

可视化

被引次数

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 10

Metrics

本文评价

推荐阅读 10