西安电子科技大学学报

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一种纠单个闪存单元移位错误码的译码方法

慕建君;赵鹏;焦晓鹏   

  1. (西安电子科技大学 计算机学院,陕西 西安 710071)
  • 收稿日期:2015-11-03 出版日期:2016-12-20 发布日期:2017-01-19
  • 作者简介:慕建君(1965-),男,教授,E-mail: jjmu@xidian.edu.cn.
  • 基金资助:

    国家自然科学基金资助项目(61271004, 61471286)

Decoding of codes correcting a single translocation error for the cell's level of flash memory

MU Jianjun;ZHAO Peng;JIAO Xiaopeng   

  1. (School of Computer Science and Technology, Xidian Univ., Xi'an 710071, China)
  • Received:2015-11-03 Online:2016-12-20 Published:2017-01-19

摘要:

通过利用置换来表示闪存单元数据的等级调制编码方案,可有效地提高闪速存储设备所存储数据的可靠性,而成为闪速数据存储系统差错控制编码的一个重要技术.基于置换码的交织,提出了一种可以纠单个闪存单元等级“移位错误”的等级调制纠错码的构造方法. 在深入分析置换理论性质的基础上,给出了该等级调制纠错码的相应译码方法.

关键词: 置换码, 闪存, 等级调制, 纠错码

Abstract:

By using permutation to represent the data of flash memory cells, the rank modulation scheme, which can effectively improve the reliability of the data stored by the flash storage device, has become an important technology of the error control coding in flash data storage system. Based on permutation code interleaving, the construction for the rank modulation code that can correct a single translocation error for the cell's level of flash memory is proposed. By making a detailed analysis of the properties of permutation theory, the corresponding decodinHocquenghem-Bose-Chandharig method for this rank modulation code is given.

Key words: permutation codes, flash memory, rank modulation, error-correcting codes

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