一种适用于移动芯片的低功耗低温漂LDO电路

doi:10.3969/j.issn.1001-2400.2018.06.010

西安电子科技大学学报 ›› 2018, Vol. 45 ›› Issue (6): 57-62.doi: 10.3969/j.issn.1001-2400.2018.06.010

一种适用于移动芯片的低功耗低温漂LDO电路

陈迪平;应韬;董刚

(湖南大学物理与微电子科学学院, 湖南长沙 410082)

收稿日期:2017-11-30 出版日期:2018-12-20 发布日期:2018-12-20
作者简介:陈迪平(1962-)，男，教授，E-mail: chdp@hnu.edu.cn
基金资助:
国家自然科学基金资助项目(61474041)；湖南省科技计划资助项目(2014FJ1003)

Design of a low-power low-temperature-drift LDO regulator in mobile chips

CHEN Diping;YING Tao;DONG Gang

(College of Physics and Microelectronics Science, Hunan Univ., Changsha 410082, China)

Received:2017-11-30 Online:2018-12-20 Published:2018-12-20

摘要/Abstract

摘要： 针对移动设备低功耗的要求，基于GSMC 0.18μm CMOS集成电路工艺，设计了一种新型无片外电容低压差线性稳压电路．在传统结构的基础上，用经温度补偿的恒流源替代反馈电阻，并将此恒流源作为基准电压源电路及误差放大器偏置参考电流，降低了静态功耗，同时对输出电压实现了温度补偿且可调．结果表明，在2.85～4.00V工作电压范围内，空载时静态电流仅为5.486μA; 在-40~85℃工作温度范围内，输出电压温漂为9.772×10^-6/℃；电路版图面积仅为0.12mm×0.09mm．

关键词: 低压差线性稳压器, 低功耗, 低温度系数, 温度补偿

Abstract:

To fulfill the need of low-power consumption on mobile devices, an output-capacitorless low dropout regulator is designed based on the GSMC 0.18μm CMOS technology. On the basis of the framework of a conventional low dropout regulator circuit, a constant-current source with temperature compensation instead of a feedback resistor is placed and used as the bias reference current for the reference voltage source and the error amplifier. Consequently, the quiescent power is reduced, and in the meantime, both the temperature compensation and adjustability of the output voltage are achieved. The result shows that the quiescent current is only 5.486μA under a voltage between 2.85V and 4.00V, that the temperature coefficient of the output voltage is 9.772×10^-6/℃ with a temperature between -40℃ and 85℃, and that the active layout area of this LDO is 0.12mm×0.09mm.

Key words: low-dropout regulator, low power, low temperature coefficient, temperature compensation

中图分类号:

TN432

陈迪平, 应韬, 董刚. 一种适用于移动芯片的低功耗低温漂LDO电路[J]. 西安电子科技大学学报, 2018, 45(6): 57-62.

CHEN Diping, YING Tao, DONG Gang. Design of a low-power low-temperature-drift LDO regulator in mobile chips[J]. Journal of Xidian University, 2018, 45(6): 57-62.

参考文献［12］

［1］	EL-NOZAHI M, AMER A, TORRES J, et al. High PSR Low Drop-out Regulator with Feed-forward Ripple Cancellation Technique［J］. IEEE Journal of Solid-State Circuits, 2010, 45(3): 565-577.<br />
［2］	HO M, LEUNG K N, MAK K L. A Low-power Fast-transient 90-nm Low-dropout Regulator with Multiple Small-gain Stages［J］. IEEE Journal of Solid-State Circuits, 2010, 45(11): 2466-2475.<br />
［3］	TAN X L. A LDO Regulator with Weighted Current Feedback Technique for 0. 47nF-10nF Capacitive Load［J］. IEEE Journal of Solid-State Circuits, 2014, 49(11): 2658-2672.<br />
［4］	SHIRMOHAMMADLI V, SABERKARI A, MARTINEZ-GARCIA H, et al. An Output-capacitorless FVF-based Low-dropout Regulator for Power Management Applications［C］//Proceedings of the 2016 IEEE 14th International Conference on Industrial Informatics. Piscataway: IEEE, 2017: 258-263.<br />
［5］	FAN S Q, LI H Q, GUO Z Q, et al. A 5. 2μA Quiescent Current LDO Regulator with High Stability and Wide Load Range for CZT Detectors［J］. IEEE Transactions on Nuclear Science, 2017, 64(4): 1087-1094.<br />
［6］	AL-SHYOUKH M, LEE H, PEREZ R. A Transient-enhanced Low-quiescent Current Low-dropout Regulator with Buffer Impedance Attenuation［J］. IEEE Journal of Solid-State Circuits, 2007, 42(8): 1732-1742.<br />
［7］	封鲁平. 一种大电流、高稳定性的LDO线性稳压器的研究与设计［D］. 电子科技大学, 2010:10-14.<br />
［8］	MAGOD R, SUDA N, IVANOV V, et al. A Low-noise Output Capacitorless Low-dropout Regulator with a Switched-RC Bandgap Reference［J］. IEEE Transactions on Power Electronics, 2017, 32(4): 2856-2864.<br />
［9］	PENG S Y, LIU L H, CHANG P K, et al. A Power-efficient Reconfigurable Output-capacitor-less Low-drop-out Regulator for Low-power Analog Sensing Front-end［J］. IEEE Transactions on Circuits & Systems I: Regular Papers, 2017, 64(6): 1318-1327.<br />
［10］	GUO J P, LEUNG K N. A 6-μW Chip-area-efficient Output-capacitorless LDO in 90-nm CMOS Technology［J］. IEEE Journal of Solid-State Circuits, 2010, 45(9): 1896-1905.<br />
［11］	王玉伟, 张鸿, 张瑞智. 一种超低功耗的低电压全金属氧化物半导体基准电压源［J］. 西安交通大学学报, 2017, 51(8): 47-52.<br />
	WANG Yuwei, ZHANG Hong, ZHANG Ruizhi. A Low-voltage All-metal Oxide Semiconductor Voltage Reference with Ultra-low Power［J］. Journal of Xi'an Jiaotong University, 2017, 51(8): 47-52.<br />
［12］	李娅妮, 孙亚东, 王旭. 一种低失调高PSRR的带隙基准电路［J］. 西安电子科技大学学报, 2017, 44(5): 92-96.<br />
	LI Yani, SUN Yadong, WANG Xu. Low-offset High-PSRR Bandgap Voltage Reference［J］. Journal of Xidian University, 2017, 44(5): 92-96.<br />
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一种适用于移动芯片的低功耗低温漂LDO电路

Design of a low-power low-temperature-drift LDO regulator in mobile chips

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一种适用于移动芯片的低功耗低温漂LDO电路

Design of a low-power low-temperature-drift LDO regulator in mobile chips

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