基极注入HPM导致的双极型晶体管失效分析

doi:10.3969/j.issn.1001-2400.2014.01.017

J4 ›› 2014, Vol. 41 ›› Issue (1): 92-97.doi: 10.3969/j.issn.1001-2400.2014.01.017

基极注入HPM导致的双极型晶体管失效分析

范菊平^1,2;游海龙^1,2;贾新章^1,2

(1. 西安电子科技大学微电子学院，陕西西安 710071;
2. 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室，陕西西安 710071)

收稿日期:2013-05-13 出版日期:2014-02-20 发布日期:2014-04-02
通讯作者: 范菊平
作者简介:范菊平(1968-)，男，高级工程师，西安电子科技大学博士研究生，E-mail: 13572180798@163.com．
基金资助:
国家自然科学基金资助项目(60906051)

Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base

FAN Juping^1,2;YOU Hailong^1,2;JIA Xinzhang^1,2

(1. School of Microelectronic, Xidian Univ., Xi'an 710071， China;
2. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2013-05-13 Online:2014-02-20 Published:2014-04-02
Contact: FAN Juping

摘要/Abstract

摘要：

为了研究高功率微波对双极型晶体管的作用，在双极型晶体管基极直接注入高功率微波效应实验现象的基础上，建立了高功率微波作用于双极型器件的物理过程与模型，并通过器件仿真，分析确定了高功率微波引起器件失效的主要原因是：高功率微波产生的感应电压脉冲，引起双极型器件基区烧毁形成熔丝和产生大量缺陷．基区烧毁面积与缺陷数量随高功率微波作用的时间和功率的增大而增大，不同的烧毁面积引起失效器件的直流特性将发生变化．器件仿真与实验结果能较好吻合，验证了文中结论．

关键词: 高功率微波, 双极型晶体管, 直流特性, 烧毁面积

Abstract:

In order to determine the influence of HPM on BJT, the physical process and model are proposed based on the experimental phenomena of BJT injecting HPM from the base. Simulation results by using the model and process proposed in the paper show that the main mechanism of failure and degradation of BJT caused by HPM is that the induced voltage pulse generated by HPM leads to the burn-up and the formation of the fuse element and defect in the base. The burnt area and the number of defects which vary with the power and time of HPM on the devices cause the device failure and the change of DC characteristics.The simulation result is in good agreement with the phenomena of the BJT HPM effect experiment, which indicates that the analysis in this paper is correct.

Key words: high power microwave, bipolar junction transistors, DC characteristics, burn area

范菊平;游海龙;贾新章. 基极注入HPM导致的双极型晶体管失效分析[J]. J4, 2014, 41(1): 92-97.

FAN Juping;YOU Hailong;JIA Xinzhang. Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base[J]. J4, 2014, 41(1): 92-97.

参考文献

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基极注入HPM导致的双极型晶体管失效分析

Mechanism analysis and physical process of bipolar junction transistor failure due to HPM injection from the base

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