关键词: 高电子迁移率晶体管, 质子辐照, 空位缺陷, 非电离能量损失

Abstract:

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs／InGaAs／InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In_0.52Al_0.48As and In_0.53Ga_0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.

Key words: high electron mobility transistor, proton radiation, vacancy defects, non-ionizing energy loss