西安电子科技大学学报 ›› 2022, Vol. 49 ›› Issue (3): 222-229.doi: 10.19665/j.issn1001-2400.2022.03.025

• 电子科学与技术&其他 • 上一篇    下一篇

一种高精度紧凑型X波段6位数控移相器

陈宁(),梁煜(),张为()   

  1. 天津大学 微电子学院,天津 300072
  • 收稿日期:2021-01-23 修回日期:2022-01-27 出版日期:2022-06-20 发布日期:2022-07-04
  • 作者简介:陈宁(1995—),女,天津大学硕士研究生,E-mail: chenn@tju.edu.cn|梁煜(1975—),男,副教授,博士,E-mail: liangyu@tju.edu.cn|张为(1975—),男,教授,博士,E-mail: tjuzhangwei@tju.edu.cn
  • 基金资助:
    国家基础加强重点项目基金(2019JCJQZD24603)

High-precision compacted X-band 6-bit digital phase shifter

CHEN Ning(),LIANG Yu(),ZHANG Wei()   

  1. School of Microelectronics,Tianjin University,Tianjin 300072,China
  • Received:2021-01-23 Revised:2022-01-27 Online:2022-06-20 Published:2022-07-04

摘要:

X波段有源相控阵雷达广泛应用于导弹防御、气象监控等领域。其中,移相器在有源相控阵的接收、发射组件中为核心功能电路,普遍存在于整个有源相控阵列中。它通过数字系统控制实现对接收或发射信号的相位调制,以准确控制目标信号,精准反馈相控雷达的扫描信息,是影响相控阵系统性能和成本的关键单元。针对移相器中大移相单元宽带下高集成度与高移相精度难以同时满足的问题,基于0.18 μm SiGe BiCMOS工艺设计了一款应用于X波段的紧凑型6位数控移相器。通过级联6级不同的移相单元,移相器可在360°移相范围内实现最小5.625°的移相步进。此外,为了减小芯片占用面积,针对90°移相单元提出一种内嵌开关式的结构,相对于传统大单元通过开关来选择路径的结构,芯片的面积大大地降低了。电路开关选用深阱NMOS场效应管,应用浮体技术降低了晶体管对地寄生电容,从而提高了开关的性能。仿真结果表明,在8.3~12.0 GHz频带内,移相器移相均方根误差小于等于2.5°,插入损耗小于等于-16.7 dB,幅度均方根误差小于等于1.25 dB,核心电路版图面积为1.68 mm×0.64 mm。

关键词: 移相器, 带通滤波, 收发组件

Abstract:

X-band active phased array radars are widely used in missile defense,weather monitoring and other fields.The phase shifter is the critical function circuit in the transceivers with an active phased array,and exists widely in the whole active phased array.In view of the problem that high-integration and high-precision cannot be simultaneously met under the broadband of a large phase-shifting unit,a compacted 6-bit digital phase shifter applied in the X-band is designed based on the 0.18 μm SiGe BiCMOS process.By means of cascade 6 different phase shifting units,the phase shifter can achieve a minimum phase shifting step of 5.625° in the range of 360° phase shifting.In addition,in order to reduce the area of the chip,this design proposes an embedded switching structure for the 90°phase shifting unit,which greatly reduces the area of the chip compared with the traditional structure where the large unit chooses the path by switching.The deep-well NMOS transistor is used as the switch to control the working state of each phase shift unit with the floating body technology which is used to improve the switch isolation by reducing the parasitic capacitance of the transistor to the ground.Simulation results show that within the 8.3~12.0 GHz,the RMS phase error is less than 2.5°,that the insertion loss is less than -16.73 dB,and that the RMS amplitude error is less than 1.25 dB.The chip core layout area is 1.68 mm×0.64 mm.

Key words: phase shifters, bandpass filters, transceivers

中图分类号: 

  • TN433
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