宽输入快速启动的高精度电压基准电路设计

宽输入快速启动的高精度电压基准电路设计

王辉1;王松林1;来新泉2;代国定2;郭宝龙1

(1. 西安电子科技大学机电工程学院，陕西西安 710071;
2. 西安电子科技大学电子工程学院，陕西西安 710071)

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2008-04-20 发布日期:2008-03-28
通讯作者: 王辉

The design and realization of wide input and fast start up high precision voltage reference

WANG Hui1;WANG Song-lin1;LAI Xin-quan2;DAI Guo-ding2;GUO Bao-long1

(1. School of Mechano-electronic Engineering, Xidian Univ., Xi′an 710071， China;
2. School of Electronic Engineering, Xidian Univ., Xi′an 710071， China)

Received:1900-01-01 Revised:1900-01-01 Online:2008-04-20 Published:2008-03-28
Contact: WANG Hui

摘要/Abstract

摘要： 采用BCD(bipolar CMOS DMOS)工艺，设计了一款不需调节且可快速启动的高精度电压基准电路．利用齐纳二极管的稳压特性，构成TTL_BUFFER缓冲电路，使基准电路的输入电压变化范围在1V左右，从而提高电压基准精度．运用MOS器件的自偏特性，迅速给电压基准提供一个偏置，完成了整个电路的快速启动．该电路与基准电路结合后，当输入电压在6.3～14V的范围内时，其基准电压摆动小于2mV;启动时间为20μs左右．与同类电路相比，该电压基准输出摆动缩小了60％，启动时间缩短了40％．

关键词: bipolar CMOS DMOS(BCD), 电压基准, 快速启动

Abstract: By adopting the BCD technology, a high precise voltage reference circuit starting-up quickly and without trimming is designed. The TTL_BUFFER using the voltage stabilizing characteristic of the Zener diode causes the variation of input voltage with voltage reference to be about 1V and improves the precision of the voltage reference. Using the self off-set characteristic, the MOS biases the voltage reference quickly, and then the fast starting-up of the whole circuit is completed. Combining the voltage reference, the circuit has its reference voltage swing of less than 2mV and a start-up time of about 20μs when the input voltage lies between 6.3V and 14V. Compared with the circuits of the same type, the output swing of the voltage reference decreases by 60％ and the start up time shortens by 40％.

Key words: bipolar CMOS DMOS(BCD), voltage reference, fast-start-up

中图分类号:

TN386

王辉1;王松林1;来新泉2;代国定2;郭宝龙1. 宽输入快速启动的高精度电压基准电路设计
[J]. J4, 2008, 35(2): 272-276.

WANG Hui1;WANG Song-lin1;LAI Xin-quan2;DAI Guo-ding2;GUO Bao-long1. The design and realization of wide input and fast start up high precision voltage reference
[J]. J4, 2008, 35(2): 272-276.