关键词: 绝缘层上硅, 单轴应变, 机械弯曲, 弹塑性力学

Abstract:

Based on the theory of elasticity and the mechanical properties of SOI, this paper puts forward a new method to produce the uniaxially strained SOI wafer, and describes the principle of the process. The 4-in. Silicon-On-Insulater wafer under goes the mechanical-bended test on the pedestal whose curvature radius is 0.75m, and then it is annealed at 250℃ for 20 hours to achieve the uniaxial strain. The IR-transmission-unaffected-diffraction instrument and Raman spectrum instrument are used for study of the pre-bonding quality and strain degree. The frequency shift of the Raman spectrum is 520.3cm^{-1．The Si peak of the strained Si layer is shifted by -0.3cm-1 compared to the typical value. It is indicated that a compressive uniaxial strain can be obtained after bending and annealing. The comparative strain is 0.077%, higher than the value of 0.059% in the literature.}

Key words: SOI, uniaxial strain, mechanically bending, elastic-plastic mechanics