非晶硅薄膜晶体管关态电流的物理模型

doi:10.3969/j.issn.1001-2400.2014.05.023

J4 ›› 2014, Vol. 41 ›› Issue (5): 135-140.doi: 10.3969/j.issn.1001-2400.2014.05.023

非晶硅薄膜晶体管关态电流的物理模型

恩云飞^1,2;刘远²;何玉娟²;师谦²;郝跃¹

(1. 西安电子科技大学微电子学院，陕西西安 710071；
2. 工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室，广东广州 510610)

收稿日期:2013-05-17 出版日期:2014-10-20 发布日期:2014-11-27
通讯作者: 恩云飞
作者简介:恩云飞(1968-)，女，研究员，E-mail: Enyf@ceprei.com．
基金资助:
国家自然科学基金资助项目(61204112)；中国博士后科学基金资助项目(2012M521628)

Physical model for the off current in amorphous silicon thin film transistors

EN Yunfei^1,2;LIU Yuan²;HE Yujuan²;SHI Qian²;HAO Yue¹

(1. School of Microelectronic, Xidian Univ., Xi'an 710071, China;
2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China)

Received:2013-05-17 Online:2014-10-20 Published:2014-11-27
Contact: EN Yunfei

摘要/Abstract

摘要：

基于器件有源层内纵向电场变化模型，提出了背沟界面能带弯曲量与栅源电压的近似方程，并针对背沟电子传导机制建立器件反向亚阈电流模型;基于空穴的一维连续性方程，提出有源层内空穴逃逸率的物理模型，并针对前沟空穴传导机制建立器件泄漏电流模型．实验结果验证了所提关态电流物理模型的准确性，曲线拟合良好．

关键词: 非晶硅, 薄膜晶体管, 关态电流, 泄漏电流, 反向亚阈电流

Abstract:

A physical model for the off current in amorphous silicon thin film transistors is proposed. Firstly, an approximation for the band bending in the back interface as a function of the gate-source voltage is derived in the reverse subthreshold region, and then a current model due to electron conduction in the back channel is developed by considering the deep states. Secondly, a rate used to describe the escaping possibility of holes in the bulk a-Si:H layer is proposed based on the one-dimensional continuity equation. By considering the hole generation rate in the drain depletion region and the hole escaping rate in the bulk a-Si:H layer, a leakage current model due to hole conduction in the front channel is developed. The proposed model has been verified using the experimental data.

Key words: amorphous silicon, thin film transistors, off current, leakage current, reverse subthreshold current

恩云飞;刘远;何玉娟;师谦;郝跃. 非晶硅薄膜晶体管关态电流的物理模型[J]. J4, 2014, 41(5): 135-140.

EN Yunfei;LIU Yuan;HE Yujuan;SHI Qian;HAO Yue. Physical model for the off current in amorphous silicon thin film transistors[J]. J4, 2014, 41(5): 135-140.

参考文献

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非晶硅薄膜晶体管关态电流的物理模型

Physical model for the off current in amorphous silicon thin film transistors

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