关键词: 4H-SiC, 电子霍耳迁移率, 霍耳散射因子, 中性杂质散射, 补偿率

Abstract: Theoretical calculations have been made on the electron Hall mobility and Hall scattering factor in the nitrogen-doped 4H-SiC based on an simplified analytical low field transport model considering five main scattering mechanisms including neutral impurity scattering. The results show that at lower temperatures, with increasing doping concentration, the impact of neutral impurity scattering becomes more significant. However the electron Hall mobility is controlled by intervalley phonon deformation potential scattering when the temperature is higher. In addition, the electron Hall mobility depends strongly on the compensation ratio when the donor concentration is kept constant. The Hall scattering factor is not always equal to one, but has a strong dependence on temperature. Comparisons with experimental data confirm the present calculation over a wide range of temperatures and doping concentrations.

Key words: 4H-SiC, electron Hall mobility, Hall scattering factor, neutral impurity scattering, compensation ratio