Journal of Xidian University ›› 2022, Vol. 49 ›› Issue (6): 51-57.doi: 10.19665/j.issn1001-2400.2022.06.007

• Information and Communications Engineering • Previous Articles     Next Articles

Design of a SiGe BiCMOS broadband low noise amplifier

GUO Fei(),LIANG Yu(),ZHANG Wei(),YANG Xue()   

  1. School of Microelectronics,Tianjin University,Tianjin 300072,China
  • Received:2021-10-11 Online:2022-12-20 Published:2023-02-09

Abstract:

To meet the design requirements of a low noise amplifier in the receiving front-end of broadband radio frequency communication,a new broadband matching structure of a miller capacitor based on the common emitter stage is proposed.The structure uses the miller capacitance of the heterojunction bipolar transistor,with the load incorporated into the input matching network for design,so as to realize broadband input matching.The structure achieves a sufficiently good low-noise performance.At the same time,it can effectively expand the working frequency band of the amplifier.A broadband low noise amplifier using a 0.13 μm SiGe BiCMOS process is designed.The circuit of the amplifier consists of three amplifiers,with the first stage adopting the Miller capacitor broadband matching structure to reduce noise and realize broadband matching and the latter two stages adopting the common base cascode structure to compensate for the gain.Simulation results show that in the 6~30 GHz band,the gain of the low noise amplifier is 16.5~19.1 dB,the noise figure is 1.43~2.66 dB,the input reflection coefficient S11 is less than -11.9 dB,and the output reflection coefficient S22 is less than -13.7 dB,and that the amplifier is unconditionally stable in the whole frequency band.The DC power consumption of the circuit is 38.7 mW at 1.8 V supply voltage.The overall chip area is 0.88 mm2.The amplifier has a desired comprehensive performance and can be used in a broadband receiving system.

Key words: broadband low noise amplifier, SiGe BiCMOS, noise, impedance matching

CLC Number: 

  • TN432

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