MOSFET辐照损伤1/f噪声产生机制的定量鉴别方法

doi:10.3969/j.issn.1001-2400.2011.04.002

J4 ›› 2011, Vol. 38 ›› Issue (4): 6-10+48.doi: 10.3969/j.issn.1001-2400.2011.04.002

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Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs

LI Weihua¹;DU Lei²;BAO Junlin¹;MA Zhongfa¹

(1. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China;
2. School of Technical Physics, Xidian Univ., Xi'an 710071， China)

Received:2010-06-09 Online:2011-08-20 Published:2011-09-28
Contact: LI Weihua E-mail:fx2000_lwh@yahoo.com.cn

Abstract

Abstract:

Wavelet maxima statistic analysis is applied to the low frequency noise of MOSFETs before and after ionizing radiation. It is found that the wavelet maxima statistics of the low frequency noise both from nMOSFETs and pMOSFETs are similar to the numerical signal generated by RTNs superposition. The discrepancy between the wavelet maxima statistics of nMOSFETs and that of pMOSFETs is quite trivial before ionizing radiation, whereas it becomes much more evident after radiation. Based on the wavelet maxima statistics analysis, it is concluded that the dominant low frequency noise generating mechanisms in both nMOSFETs and pMOSFETs are RTNs superposition. Ionizing radiation does not add new types of defects to the devices, but increase their density. nMOSFETs is damaged more severely than pMOSFETs during radiation.

Key words: MOSFET, radiation damage, flicker noise, wavelet analysis

CLC Number:

TN386.1

LI Weihua;DU Lei;BAO Junlin;MA Zhongfa. Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs[J].J4, 2011, 38(4): 6-10+48.

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Quantitative identification method for the ionizing radiation induced 1/f noise in MOSFETs

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