SiC欧姆接触特性

doi:10.3969/j.issn.1001-2400.2011.04.007

J4 ›› 2011, Vol. 38 ›› Issue (4): 38-41.doi: 10.3969/j.issn.1001-2400.2011.04.007

• Original Articles • Previous Articles Next Articles

Study of the Ohmic contact property of SiC

WANG Ping^1,2;YANG Yintang³;GUO Lixin²;SHANG Tao¹;LIU Zengji¹

(1. State Key Lab. of Integrated Service Networks, Xidian Univ., Xi'an 710071， China;
2. School of Science, Xidian Univ., Xi'an 710071， China;
3. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China)

Received:2010-10-09 Online:2011-08-20 Published:2011-09-28
Contact: WANG Ping E-mail:pingwang@xidian.edu.cn

Abstract

Abstract:

Multi-layer metal Ohmic contacts to 4H-SiC are investigated on the N⁺ion implanted layer with 950℃ annealing in Ar for 25 minutes and the n type epitaxial layer with a carrier concentration of 1.0×10¹⁹cm^-3 with 1000℃ annealing in N₂ for 2 minutes. The specific contact resistances obtained by the transmission line method (TLM) are 1.359×10^-5Ω·cm² and 3.44×10^-6Ω·cm², respectively. SIMS measurements show that the formation of the Ni silicide and the TiC facilitates to make the contacts become more Ohmic after annealing.

Key words: silicon carbide, Ohmic contacts, secondary ion mass spectrometry

CLC Number:

TN305

WANG Ping;YANG Yintang;GUO Lixin;SHANG Tao;LIU Zengji. Study of the Ohmic contact property of SiC[J].J4, 2011, 38(4): 38-41.

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Study of the Ohmic contact property of SiC

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