一种新型无源UHF RFID带隙基准电路

doi:10.3969/j.issn.1001-2400.2013.02.024

Abstract

Abstract:

A novel low-voltage, low-power current mode bandgap reference circuit for the passive UHF RFID tag is presented. The I_CTAT current is generated by V_BE of the BJT transistor. The I_CTAT current is generated by the MOSFET biased in the sub-threshold region, based on the theory that the I-V curve of the sub-threshold MOSFET shows an exponential relationship. The circuit is designed and implemented by TSMC 0.18μm CMOS technology. The biggest variation of V_ref of the reference is smaller than 1.75％. Test results show that the power of the circuit is 0.65μW, and that the minimum operating voltage is 0.829V. The active area of the circuit is about 0.04mm². As a result, the read sensitivity of the tag with the proposed bandgap reference circuit is -16dBm.

Key words: ultra high frequency radio frequency identification, low voltage, low power, sub-threshold, bandgap reference

CLC Number:

TN202

DU Yongqian;ZHUANG Yiqi;LI Xiaoming;JING Xin;DAI Li. New type bandgap reference for UHF RFID tag[J].J4, 2013, 40(2): 148-152+200.

References

［1］ Banba H, Shiga H, Umezawa A. A CMOS Bandgap Reference Circuit with Sub-1-V Operation ［J］. IEEE Journal of Solid-State Circuits, 1999, 34(2): 670-674.
［2］ Leung K N, Mok P T. Sub-1-V15-ppm/℃ CMOS bAndgap Voltage Reference without Requiring Low Threshold Voltage Device ［J］. IEEE Journal of Solid-State Circuits, 2002, 37(2): 526-530.
［3］ Sawan Y H. A 900 mV 25 μW High PSRR CMOS Voltage Reference Dedicated to Implantable Micro-devices ［EB/OL］. ［2011-10-10］. http://wenku.baidu.com/view/7e9d1ec66137ee06eff91897.html.
［4］ Isikhan M, Reich T, Richter A, et al. A New Low Voltage Bandgap Reference Topology ［EB/OL］.［2011-10-11］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5410966&tag=1.
［5］ Giustolisi G, Palumbo G, Criscione M, et al. A New Voltage Reference Topology Based on Subthreshold MOSFETs ［DB/OL］. ［2011-10-11］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1471547&tag=1.
［6］ Luis H, Pimenta T C, Moreno R L. An Ultra Low-voltage Ultra Low-power CMOS Threshold Voltage Reference ［J］. IEICE Trans on Electronics, 2007, 90(10): 2044-2050.
［7］余国义.低压低功耗CMOS基准参考源的设计［D］. 武汉: 华中科技大学, 2006.
［8］ Cajueiro P J, dos Reis Filho C A. CMOS Bandgap with Base-current Thermal Compensation ［C］//IEEE Proc of the 15th Symposium on Integrated Circuits and System Design (SBCCI). Brazil: IEE, 2002: 407-411.
［9］朱樟明, 杨银堂, 尹韬. 一种新型低压高精度CMOS电流源［J］. 西安电子科技大学学报, 2005, 32(2): 174-178.
Zhu Zhangming, Yang Yintang, Yin Tao. A Novel Low Voltage High Precision CMOS Current Reference ［J］. Journal of XiDian of university, 2005, 32(2): 174-178.
［10］ Ng D C W, Kwong D K K, Wong N. A Sub-1 V, 26 W, Low-output-impedance CMOS Bandgap Reference with a Low Dropout or Source Follower Mode ［J］. IEEE Trans on Very Large Scale Integration (VLSI) Systems, 2011, 19(7): 1305-1309.
［11］ Fayomi C J B, Stratz S J. Novel Approach to Low-voltage Low-power Bandgap Reference Voltage in Standard CMOS Process ［DB/OL］. ［2011-10-13］. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4263340.
［12］ Giustolisi G, Palumbo G, Criscione M, et al. A Low Voltage Low-power Voltage Reference Based on Subthreshold MOSFETs ［J］. IEEE J Solid-State Circuits, 2003, 38(1): 151-154.

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New type bandgap reference for UHF RFID tag

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