Journal of Xidian University ›› 2018, Vol. 45 ›› Issue (6): 57-62.doi: 10.3969/j.issn.1001-2400.2018.06.010

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Design of a low-power low-temperature-drift LDO regulator in mobile chips

CHEN Diping;YING Tao;DONG Gang   

  1. (College of Physics and Microelectronics Science, Hunan Univ., Changsha 410082, China)
  • Received:2017-11-30 Online:2018-12-20 Published:2018-12-20

Abstract:

To fulfill the need of low-power consumption on mobile devices, an output-capacitorless low dropout regulator is designed based on the GSMC 0.18μm CMOS technology. On the basis of the framework of a conventional low dropout regulator circuit, a constant-current source with temperature compensation instead of a feedback resistor is placed and used as the bias reference current for the reference voltage source and the error amplifier. Consequently, the quiescent power is reduced, and in the meantime, both the temperature compensation and adjustability of the output voltage are achieved. The result shows that the quiescent current is only 5.486μA under a voltage between 2.85V and 4.00V, that the temperature coefficient of the output voltage is 9.772×10-6/℃ with a temperature between -40℃ and 85℃, and that the active layout area of this LDO is 0.12mm×0.09mm.


Key words: low-dropout regulator, low power, low temperature coefficient, temperature compensation

CLC Number: 

  • TN432

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