一种纠单个闪存单元移位错误码的译码方法

doi:10.3969/j.issn.1001-2400.2016.06.009

Abstract

Abstract:

By using permutation to represent the data of flash memory cells, the rank modulation scheme, which can effectively improve the reliability of the data stored by the flash storage device, has become an important technology of the error control coding in flash data storage system. Based on permutation code interleaving, the construction for the rank modulation code that can correct a single translocation error for the cell's level of flash memory is proposed. By making a detailed analysis of the properties of permutation theory, the corresponding decodinHocquenghem-Bose-Chandharig method for this rank modulation code is given.

Key words: permutation codes, flash memory, rank modulation, error-correcting codes

MU Jianjun;ZHAO Peng;JIAO Xiaopeng. Decoding of codes correcting a single translocation error for the cell's level of flash memory[J].Journal of Xidian University, 2016, 43(6): 51-55+121.

References

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Decoding of codes correcting a single translocation error for the cell's level of flash memory

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