一种薄膜体声波谐振器的设计与验证

doi:10.19665/j.issn1001-2400.2019.04.020

Abstract

Abstract:

In order to simplify the design of the film thickness of the film bulk acoustic resonator, a design method for film bulk acoustic resonator film thickness is proposed. The simulation structure consists of the induced layer and the upper electrode-piezoelectric-electrode sandwich structure. The initial film of the film bulk acoustic resonator is designed by the optimal effective electromechanical coupling coefficient, and then the thickness of the induced layer and the corresponding frequency offset value are determined. The parallel resonant frequency is compensated with the frequency offset, and then the film thickness of the electrode and the piezoelectric are recalculated. Finally, the structure is simulated by COMSOL. When the parallel resonant frequency is 3.60 GHz, the frequency offset value of the 100 nm AlN is 0.20 GHz. The effective electromechanical coupling coefficient of the AlN is 5.907%. After frequency compensation, the series resonant frequency and parallel resonant frequency of the AlN are 3.48 GHz and 3.60 GHz, respectively. The design method is verified. The induced layer effectively optimizes the C-axis characteristics of the piezoelectric layer and reduces energy loss.

Key words: thin film bulk acoustic resonator, aluminum nitride, induced layers

CLC Number:

TN713

SHEN Hongxia,OU We1. Design and verification of a film bulk acoustic resonator[J].Journal of Xidian University, 2019, 46(4): 144-149.

Figures/Tables 12

参数	Mo		Au
t/(t+ $d 1$ )	0.156 0	0.163 8	0.084 6	0.089 1
电极层厚度t/nm	94	98	48	49
压电层厚度 $2 d 1$ /nm	102 1	100 2	104 0	102 2

参数	三明治结构	补偿前	补偿后
输入的串联谐振频率/GHz	3.60	3.60	3.80
电极层厚度t/nm	98	98	93
压电层厚度 $2 d 1$ /nm	100 2	100 2	950
诱导层厚度 $d 2$ /nm		100	100

参数	Mo		Au
参数	0.156 0	0.163 8	0.084 6	0.089 1
电极层厚度t/nm	94	98	48	49
压电层厚度 $2 d 1$ /nm	1 021	1 002	1 040	1 022
串联谐振频率 $f s$ /GHz	3.48	3.50	3.47	3.49
并联谐振频率 $f p$ /GHz	3.60	3.62	3.60	3.62

References 11

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Design and verification of a film bulk acoustic resonator

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