一种宽温度范围的低温度系数带隙基准源设计

doi:10.19665/j.issn1001-2400.2021.04.012

Abstract

Abstract:

In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips,a low temperature coefficient bandgap reference with a wide temperature range is proposed.On the basis of the traditional Banba bandgap reference structure,the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage.The temperature coefficient of the circuit is reduced.At the same time,the operating temperature range of the circuit is extended.The circuit performances are verified in the TSMC 180 nm CMOS process.Test results show that the temperature coefficient of the circuit is as low as 7.2×10^-6/℃ in the range of-40 ℃ to 160 ℃.The power supply rejection ratio at a low frequency is -48.52 dB.The static current under the 1.8 V power supply voltage is 68.38 μA,and the core area of the chip is 0.025 mm².

Key words: bandgap reference, low temperature coefficient, wide temperature range

CLC Number:

TN433

AN Jinghui,WU Chenjian. Design of a low temperature coefficient bandgap reference with a wide temperature range[J].Journal of Xidian University, 2021, 48(4): 91-96.

Figures/Tables 8

References 14

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参数	本设计	文献[6]	文献[8]	文献[12]	文献[13]	文献[14]
工艺/nm	180	65	130	180	180	180
输出参考电压/mV	302.05	168	800	118.41	225.5	756
电源电压/V	1.8	3	1.1	0.45	0.55	1
功耗/μW	123.08	29 100	0.027 5	0.015 6	0.075	0.023
温度范围/(℃)	-40~160	-20~100	-40~85	-40~85	-20~80	-40~125
温度系数/(×10^-6/℃)	7.2	36.9	100	59.4	21.9	74
电源抑制比/dB	-48.52			-50.3		-52
	@1 KHz			@100 Hz		@100 Hz
面积/mm²	0.025	0.23	0.003	0.013 2		0.016 2

Design of a low temperature coefficient bandgap reference with a wide temperature range

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