(4,4)碳纳米管/碳化硅纳米管异质结的输运特性

doi:10.3969/j.issn.1001-2400.2010.03.024

J4 ›› 2010, Vol. 37 ›› Issue (3): 520-523.doi: 10.3969/j.issn.1001-2400.2010.03.024

• Original Articles • Previous Articles Next Articles

Electronic transport properties of a (4， 4) carbon nanotube/silicon carbide nanotube heterojunction

LIU Hong-xia¹;SONG Jiu-xu^1,2;ZHANG He-ming¹

(1. Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071， China;
2. School of Electronic Eng., Xi'an Shiyou Univ., Xi'an 710065， China)

Received:2009-02-11 Online:2010-06-20 Published:2010-07-23
Contact: LIU Hong-xia E-mail:liuhx@mail.xidian.edu.cn

Abstract

Abstract:

The transport properties of the nanotube heterojunctions are the basis for the studies of their working mechanism, which is important for the theoretical study and the practical application. First, a two-probe model for a (4, 4) carbon nanotube (CNT)/silicon carbide nanotube (SiCNT) heterojunction is established. The transport properties of the heterojunction is realized with the nonequilibrium Green's function (NEGF). From the orbitals of the molecule projected self-consistent Hamiltonian, we can see that the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) concentrate mainly on the CNT section and that the band gap of the heterojunction is about 0.48 eV. The turn-on voltages of the heterojunction under the positive and negative voltage are +2.0V and -1.6V, which can be achieved from its voltage-current characteristic.

Key words: carbon nanotube, silicon carbide nanotube, heterojunction, transport properties, nonequilibrium Green's function

LIU Hong-xia;SONG Jiu-xu;ZHANG He-ming. Electronic transport properties of a (4， 4) carbon nanotube/silicon carbide nanotube heterojunction[J].J4, 2010, 37(3): 520-523.

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Electronic transport properties of a (4， 4) carbon nanotube/silicon carbide nanotube heterojunction

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