CFD模拟RPCVD的正交法优化设计与分析

doi:10.3969/j.issn.1001-2400.2013.04.012

Abstract

Abstract:

The simulation of multi-level and multi-factor for the growth of SiGe matetial by RPCVD is designed by adopting the orthogonal method. A FLUENT simulation of density, velocity and pressure distributions for the above designs is given by using CFD software. According to the range and variance analysis of the growth surface simulation results in nine positions, the final optimized simulation parameters are obtained. The optimization results by using the Orthogonal Method that the flux of the inlet is 1.67×10^-4m³/s, the pressure of the chamber is 2666.44Pa at low tempreture(823K) and that the flux keeps 1.67×10^-4m³/s, and the pressure is 7999.32Pa at high tempreture(1123K) are consistent with those by practical technology.

Key words: orthogonal method, computational fluid dynamics, reduced pressure chemical vapor deposition, SiGe

CLC Number:

TN304.005

DAI Xianying;GUO Jingjing;SHAO Chenfeng;ZHENG Ruochuan;HAO Yue. Orthogonal optimal design and analysis of RPCVD simulation by CFD[J].J4, 2013, 40(4): 72-78.

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Orthogonal optimal design and analysis of RPCVD simulation by CFD

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