应变锗的导带结构计算与分析

doi:10.3969/j.issn.1001-2400.2014.02.020

Abstract

Abstract:

This paper estabilishes the strained-tensor model by Hooke's law and calculates the energy-level shifts of L, Δ and Γ valleys by the deformation potential theory. By enforcing the uniaxial stress in germanium along <001> direction, the edge band of the Δ valley is split with the bottom energy-level being the lowest one among all valleys when the compressive stress is 1.8GPa. When the strained direction is <110>, the edge bands of L and Δ valleys are split. The L valley is split as the strained direction is <111>. When the biaxial tensile-strain is applied, we obtain the conclusion that the strained Ge can become the direct band gap from the indirect band gap as a tensile in-plane strain is 1.8％.

Key words: strained Ge, conduction band structure, uniaxial and biaxial, strain tensor

CLC Number:

TN304.1

DAI Xianying;LI Jinlong;HAO Yue. Calculation and analysis of the conduction band-structure of strained Germanium[J].J4, 2014, 41(2): 120-124+171.

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Calculation and analysis of the conduction band-structure of strained Germanium

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