J4 ›› 2014, Vol. 41 ›› Issue (2): 125-129.doi: 10.3969/j.issn.1001-2400.2014.02.021

• Original Articles • Previous Articles     Next Articles

Design of the S band 6bits high precision phase shifter

YANG Xiaofeng;SHI Jiangyi;MA Peijun;HAO Yue   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2013-09-03 Online:2014-04-20 Published:2014-05-30
  • Contact: YANG Xiaofeng E-mail:xfyang@mail.xidian.edu.cn

Abstract:

A digital 6-bit phase shifter for S-band based 0.25μm GaAs HEMT technology is presented. The high-pass/low-pass network and all-pass network are utilized synthetically for the topology of the phase shifter, with both the phase precision improvement technique and the series scatter restrain technique adopted. The relative phase shift varies from 0 to 360 at the step of 5.625°. Over the design band of 2.1~2.7GHz, the minimum rms phase error is 1.13°, and a low insertion loss is less than 6.3dB, of which the amplitude fluctuation is less than 0.4dB and the input and output scatter parameter is less than -10dB under all conditions.

Key words: high electron mobility transistor, digital phase shifters, high-pass/low-pass network, phase precision, series scatter restrain

CLC Number: 

  • TP391.72

Baidu
map