GaN薄膜外延过程的动力学蒙特卡洛仿真

doi:10.3969/j.issn.1001-2400.2016.03.029

Abstract

Abstract:

A chemical reaction mode about GaN epitaxy in MOCVD is presented. We simulate the growth process of GaN in the vertical-spray MOCVD system on this mode using the KMC mothod. The result shows that adductive reaction mostly occurs at a lower temperature and pyrolytic reaction mostly occurs at a high temperature. And the growth rate increases with increasing temperature. This feature determines the surface morphology of the material. We also include the diffusion and desorption process of the reaction particle by the KMC method. These processes depend mostly on temperature and ultimately affect the surface morphology of the GaN material.

Key words: GaN, kinetic Monte Carlo(KMC), reaction model, reaction kinetics

FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Kinetic Monte Carlo simulation of GaN epitaxy[J].Journal of Xidian University, 2016, 43(3): 167-171.

References

［1］ TSENG C F, YEN T. Transport Phenomena and the Effects of Reactor Geometry for Epitaxial GaN Growth in a Vertical MOCVD Reactor［J］. Journal of Crystal Growth, 2015, 432: 54-63.
［2］ ZHANG Z, FANG H S. Influencing Factors of GaN Growth Uniformity Through Orthogonal Test Analysis［J］. Applied Thermal Engineering, 2015, 91: 53-61.
［3］ ZHOU A, XIU X Q. Effect of Lattice Defects on the Property of GaN Crystal: Amolecular Dynamics Simulation Study ［DB/OL］. ［2015-10-10］. http://www.sciencedirect.com/science/article/pii/S0749603615302445.
［4］ KEMPISTY P, STRAK P. DFT Study of Ammonia Desorption from the GaN(0001) Surface Covered with NH₃/NH₂ Mixture［J］. Journal of Crystal Growth, 2014, 403: 105-109.
［5］ TOKOI H. Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-phase Epitaxy ［J］. Journal of the Electrochemical Society, 2012, 159(5): 270-275.
［6］于海群. GaN沉积的化学反应动力学进展［J］. 材料导报A: 综述篇, 2012, 26(9): 21-24.
YU Haiqun. The Progress of Chemical Reaction Kinetics with GaN Deposition［J］. Materials Review A: Review Article, 2012, 26(9): 21-24.
［7］王国斌, 张永红, 王怀兵. 氮化镓生长反应模型与数值模拟研究［J］. 人工晶体学报, 2010, 139(S1): 160-163.
WANG Guobin, ZHANG Yonghong, WANG Huaibing. Reaction Model and Numerical Simulation of Gallium Nitride Growth［J］. Journal of Synthetic Crystals, 2010, 139(S1): 160-163.
［8］ PARIKH R P, ADOMAITIS R A. An Overview of Gallium Nitride Growth Chemistry and Its Effect on Reactor Design: Application to a Planetary Radial-flow CVD System［J］. Journal of Crystal Growth, 2006, 286(2006): 259-278.
［9］ FU K, FU Y, HAN P. Kinetic Monte Carlo Study of Metal Organic Chemical Vapor Deposition Growth Dynamics of GaN Thin Film at Microscopic Level ［DB/OL］. ［2015-10-11］. http://dx.doi.org/10.1063/1.2927389.

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Kinetic Monte Carlo simulation of GaN epitaxy

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