MOCVD反应室流场分析及其对GaN生长的影响

doi:10.3969/j.issn.1001-2400.2017.01.030

Abstract

Abstract:

A simulation of the GaN growth in a vertical MOCVD reactor is presented. The results show that the gas phase transfer process in GaN growth and material quality of GaN are all affected by the reactor height and the rotation speed of the substrate. With the increasing rotation speed of the substrate, the flow field distribution in the MOCVD reactor becomes more uniform and stable, and the gas flow rate on the substrate surface and the GaN growth rate increase. The uniformity of the GaN is improved at the same time. But the growth rate will decrease when the rotation speed becomes too high. Under the same conditions, the flow field becomes more uniform and stable when the reactor height increases, which is helpful to improving the uniformity of the GaN material. And the growth rate decreases first and then increases in the same process; the gas phase reaction is enhanced at the same time.

Key words: GaN, metal organic chemical vapor deposition, reactor structure, reaction kinetics

FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Effect of reactor geometry on GaN in a vertical MOCVD reactor[J].Journal of Xidian University, 2017, 44(1): 171-175.

References

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Effect of reactor geometry on GaN in a vertical MOCVD reactor

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