碳化硅MOSFET电路模型及其应用

doi:10.3969/j.issn.1001-2400.2018.03.018

Abstract

Abstract:

A new equivalent-circuit model of the SiC MOSFET is suggested. Based on the conventional equivalent-circuit model of the SiC MOSFET, the leakage current of the gate oxide and PN junction is included, and the invariable mobility in the conventional model is replaced by an advanced mobility model which can reflect the interface characterization of SiC／SiO₂. The accuracy of the proposed model is verified by experimental results from references. Compared to the conventional model, the proposed model can simulate the gate leakage current and the failure of SiC MOSFET. In addition, the suggested model can be utilized to study the effect of interface traps on the characteristics of the SiC MOSFET operated under the short-circuit condition.

Key words: SiC metal-oxide-semiconductor field effect transistor, interface trap, mobility, leakage current, short-circuit

ZHOU Yuming;LIU Hangzhi;YANG Tingting;WANG Bing. Circuit model of SiC MOSFET and application[J].Journal of Xidian University, 2018, 45(3): 97-101+129.

References

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Circuit model of SiC MOSFET and application

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